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BSS83PH6327

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by adom

Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs bss83ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
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bss83ph6327-etched.fit.json bss83ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss83ph6327-etched.glb bss83ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss83ph6327-etched.step bss83ph6327: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
bss83ph6327.glb Publish 0.1.0 · Ray 1mo ago
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package.json bss83ph6327: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
page.json bss83ph6327: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 23d ago
README.md bss83ph6327: specified limits as data (metadata.characteristics, 36 rows from the datasheet) · Ray 23d ago

BSS83PH6327

Infineon Technologies · MOSFETs · SOT-23

BSS83PH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal for control signal with maximum gate-source voltage ±20 V and threshold voltage between -1 and -2 V (at VGS = VDS, ID = -80 µA).
2 S passive Source terminal with internal reverse diode rated for continuous forward current -0.33 A and inverse diode forward voltage -0.84 to -1.1 V.
3 D passive Drain terminal with maximum drain-source voltage -60 V and continuous drain current -0.33 A (at TA = 25°C).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current, TA = 25 °C ID -0.33 A TA = 25 °C 1
Continuous drain current, TA = 70 °C ID -0.27 A TA = 70 °C 1
Pulsed drain current, TA = 25 °C ID puls -1.32 A TA = 25 °C 1
Avalanche energy, single pulse EAS 9.5 mJ ID = -0.33 A, VDD = -25 V, RGS = 25 W 1
Avalanche energy, periodic limited by Tjmax EAR 0.036 limited by Tjmax 1
Reverse diode dv/dt dv/dt 6 kV/µs IS = -0.33 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation, TA = 25 °C Ptot 0.36 W TA = 25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction - soldering point (Pin 3) RthJS 150 K/W 2
Thermal resistance, junction - ambient, SMD on PCB @ min. footprint RthJA 350 K/W SMD version, device on PCB, @ min. footprint 2
Thermal resistance, junction - ambient, SMD on PCB @ 6 cm2 cooling area RthJA 300 K/W SMD version, device on PCB, @ 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS -60 V VGS = 0 V, ID = -250 µA 2
Gate threshold voltage VGS(th) -1 -1.5 -2 V VGS = VDS, ID = -80 µA 2
Zero gate voltage drain current, Tj = 25 °C IDSS -0.1 -1 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C 2
Zero gate voltage drain current, Tj = 125 °C IDSS -10 -100 µA VDS = -60 V, VGS = 0 V, Tj = 125 °C 2
Gate-source leakage current IGSS -10 -100 nA VGS = -20 V, VDS = 0 V 2
Drain-source on-state resistance RDS(on) 2 3 W VGS = -4.5 V, ID = -0.27 A 2
Drain-source on-state resistance RDS(on) 1.4 2 W VGS = -10 V, ID = -0.33 A 2
Transconductance gfs 0.24 0.47 S VDS>=2IDRDS(on)max, ID = -0.27 A 3
Input capacitance Ciss 62 78 pF VGS = 0 V, VDS = -25 V, f = 1 MHz 3
Output capacitance Coss 19 24 pF VGS = 0 V, VDS = -25 V, f = 1 MHz 3
Reverse transfer capacitance Crss 7 9 pF VGS = 0 V, VDS = -25 V, f = 1 MHz 3
Turn-on delay time td(on) 23 35 ns VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W 3
Rise time tr 71 106 ns VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W 3
Turn-off delay time td(off) 56 70 ns VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W 3
Fall time tf 61 76 ns VDD = -30 V, VGS = -4.5 V, ID = -0.27 A, RG = 43 W 3
Gate to source charge Qgs 0.12 0.18 nC VDD = -48 V, ID = -0.33 A 4
Gate to drain charge Qgd 1.1 1.65 nC VDD = -48 V, ID = -0.33 A 4
Gate charge total Qg 2.38 3.57 nC VDD = -48 V, ID = -0.33 A, VGS = 0 to -10 V 4
Inverse diode continuous forward current, TA = 25 °C IS -0.33 A TA = 25 °C 4
Inverse diode direct current, pulsed, TA = 25 °C ISM -1.32 A TA = 25 °C 4
Inverse diode forward voltage VSD -0.84 -1.1 V VGS = 0 V, IF = -0.33 4
Reverse recovery time trr 59.4 89 ns VR = -30 V, IF = IS, diF/dt = 80 A/µs 4
Reverse recovery charge Qrr 37.5 56 nC VR = -30 V, IF = IS, diF/dt = 80 A/µs 4
Gate plateau voltage V(plateau) -2.94 V VDD = -48 V, ID = -0.33 A 4

CAD (KiCad official)

  • Symbol: BSS83PH6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss83ph6327-etched.step / bss83ph6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss83ph6327.step / bss83ph6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 96d66c574916a32d, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF