# BSS306NH6327

**Infineon Technologies** · MOSFETs · SOT-23

BSS306NH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel enhancement-mode MOSFET, logic level rated at 4.5 V with a V_GS maximum of ±20 V and a threshold of 1.2 to 2 V. |
| 2 | S | passive | Source of the MOSFET, connected to the body diode anode, with continuous diode forward current up to 0.5 A. |
| 3 | D | passive | Drain of the MOSFET with V_DS of 30 V, continuous drain current of 2.3 A at 25 °C and R_DS(on) max 57 mΩ at V_GS=10 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous drain current | ID |  |  | 2.3 | A | TA=25 °C | 1 |
| Continuous drain current | ID |  |  | 1.8 | A | TA=70 °C | 1 |
| Pulsed drain current | ID,pulse |  |  | 9 | A | TA=25 °C | 1 |
| Avalanche energy, single pulse | EAS |  |  | 10.8 | mJ | ID=2.3 A, RGS=25 Ω | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 6 | kV/µs | ID=2.3 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering temperature |  |  |  | 260 | °C |  | 1 |
| ESD class HBM (JESD22-A114) |  |  |  | 250 | V | Class 0 (<250V) | 1 |
| Thermal resistance, junction - ambient | RthJA |  |  | 250 | K/W | minimal footprint | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 30 |  |  | V | VGS=0 V, ID=250 µA | 2 |
| Gate threshold voltage | VGS(th) | 1.2 | 1.6 | 2 | V | VDS=VGS, ID=11 µA | 2 |
| Drain-source leakage current | IDSS |  |  | 1 | µA | VDS=30 V, VGS=0 V, Tj=25 °C | 2 |
| Drain-source leakage current | IDSS |  |  | 100 | µA | VDS=30 V, VGS=0 V, Tj=150 °C | 2 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20 V, VDS=0 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 67 | 93 | mΩ | VGS=4.5 V, ID=1.85 A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 44 | 57 | mΩ | VGS=10 V, ID=2.3 A | 2 |
| Input capacitance | Ciss |  | 207 | 275 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |
| Output capacitance | Coss |  | 75 | 100 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |
| Reverse transfer capacitance | Crss |  | 12 | 17 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |
| Diode continuous forward current | IS |  |  | 0.5 | A |  | 3 |
| Diode pulse current | IS,pulse |  |  | 9 | A |  | 3 |
| Diode forward voltage | VSD |  | 0.83 | 1.1 | V | VGS=0 V, IF=2.3 A, Tj=25 °C | 3 |

## CAD (KiCad official)

- Symbol: `BSS306NH6327`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `bss306nh6327-etched.step` / `bss306nh6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bss306nh6327.step` / `bss306nh6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586198623348527104) (9 pp, sha256 `d4e4bc1735b2f565`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bss306nh6327-datasheet.pdf)