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BSS306NH6327

Public Made by Adom

by adom

Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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bss306nh6327-hero.glb bss306nh6327: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
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page.json bss306nh6327: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 17d ago
README.md bss306nh6327: specified limits as data (metadata.characteristics, 23 rows from the datasheet) · Ray 17d ago

BSS306NH6327

Infineon Technologies · MOSFETs · SOT-23

BSS306NH6327 from Infineon Technologies, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel enhancement-mode MOSFET, logic level rated at 4.5 V with a V_GS maximum of ±20 V and a threshold of 1.2 to 2 V.
2 S passive Source of the MOSFET, connected to the body diode anode, with continuous diode forward current up to 0.5 A.
3 D passive Drain of the MOSFET with V_DS of 30 V, continuous drain current of 2.3 A at 25 °C and R_DS(on) max 57 mΩ at V_GS=10 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 2.3 A TA=25 °C 1
Continuous drain current ID 1.8 A TA=70 °C 1
Pulsed drain current ID,pulse 9 A TA=25 °C 1
Avalanche energy, single pulse EAS 10.8 mJ ID=2.3 A, RGS=25 Ω 1
Reverse diode dv/dt dv/dt 6 kV/µs ID=2.3 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Soldering temperature 260 °C 1
ESD class HBM (JESD22-A114) 250 V Class 0 (<250V) 1
Thermal resistance, junction - ambient RthJA 250 K/W minimal footprint 2
Drain-source breakdown voltage V(BR)DSS 30 V VGS=0 V, ID=250 µA 2
Gate threshold voltage VGS(th) 1.2 1.6 2 V VDS=VGS, ID=11 µA 2
Drain-source leakage current IDSS 1 µA VDS=30 V, VGS=0 V, Tj=25 °C 2
Drain-source leakage current IDSS 100 µA VDS=30 V, VGS=0 V, Tj=150 °C 2
Gate-source leakage current IGSS 100 nA VGS=20 V, VDS=0 V 2
Drain-source on-state resistance RDS(on) 67 93 mΩ VGS=4.5 V, ID=1.85 A 2
Drain-source on-state resistance RDS(on) 44 57 mΩ VGS=10 V, ID=2.3 A 2
Input capacitance Ciss 207 275 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Output capacitance Coss 75 100 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Reverse transfer capacitance Crss 12 17 pF VGS=0 V, VDS=15 V, f=1 MHz 3
Diode continuous forward current IS 0.5 A 3
Diode pulse current IS,pulse 9 A 3
Diode forward voltage VSD 0.83 1.1 V VGS=0 V, IF=2.3 A, Tj=25 °C 3

CAD (KiCad official)

  • Symbol: BSS306NH6327
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bss306nh6327-etched.step / bss306nh6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bss306nh6327.step / bss306nh6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 d4e4bc1735b2f565, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF