component
BSS306NH6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bss306nh6327: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+314−1
README.md+30@@ -21,6 +21,36 @@ BSS306NH6327 from Infineon Technologies, in a SOT-23. Pinout and pin description | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous drain current | ID | | | 2.3 | A | TA=25 °C | 1 |+| Continuous drain current | ID | | | 1.8 | A | TA=70 °C | 1 |+| Pulsed drain current | ID,pulse | | | 9 | A | TA=25 °C | 1 |+| Avalanche energy, single pulse | EAS | | | 10.8 | mJ | ID=2.3 A, RGS=25 Ω | 1 |+| Reverse diode dv/dt | dv/dt | | | 6 | kV/µs | ID=2.3 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C | 1 |+| Operating and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |+| Soldering temperature | | | | 260 | °C | | 1 |+| ESD class HBM (JESD22-A114) | | | | 250 | V | Class 0 (<250V) | 1 |+| Thermal resistance, junction - ambient | RthJA | | | 250 | K/W | minimal footprint | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 30 | | | V | VGS=0 V, ID=250 µA | 2 |+| Gate threshold voltage | VGS(th) | 1.2 | 1.6 | 2 | V | VDS=VGS, ID=11 µA | 2 |+| Drain-source leakage current | IDSS | | | 1 | µA | VDS=30 V, VGS=0 V, Tj=25 °C | 2 |+| Drain-source leakage current | IDSS | | | 100 | µA | VDS=30 V, VGS=0 V, Tj=150 °C | 2 |+| Gate-source leakage current | IGSS | | | 100 | nA | VGS=20 V, VDS=0 V | 2 |+| Drain-source on-state resistance | RDS(on) | | 67 | 93 | mΩ | VGS=4.5 V, ID=1.85 A | 2 |+| Drain-source on-state resistance | RDS(on) | | 44 | 57 | mΩ | VGS=10 V, ID=2.3 A | 2 |+| Input capacitance | Ciss | | 207 | 275 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |+| Output capacitance | Coss | | 75 | 100 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |+| Reverse transfer capacitance | Crss | | 12 | 17 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 |+| Diode continuous forward current | IS | | | 0.5 | A | | 3 |+| Diode pulse current | IS,pulse | | | 9 | A | | 3 |+| Diode forward voltage | VSD | | 0.83 | 1.1 | V | VGS=0 V, IF=2.3 A, Tj=25 °C | 3 |+ ## CAD (KiCad official) - Symbol: `BSS306NH6327`
page.json+284−1@@ -149,6 +149,289 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d4e4bc1735b2f565",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.3,+ "conditions": "TA=25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.8,+ "conditions": "TA=70 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9,+ "conditions": "TA=25 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 10.8,+ "conditions": "ID=2.3 A, RGS=25 Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Reverse diode dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "kV/µs",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "ID=2.3 A, VDS=16 V, di/dt=200 A/µs, Tj,max=150 °C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating and storage temperature",+ "symbol": "Tj, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering temperature",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "ESD class HBM (JESD22-A114)",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "Class 0 (<250V)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "minimal footprint",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0 V, ID=250 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.6,+ "max": 2,+ "conditions": "VDS=VGS, ID=11 µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30 V, VGS=0 V, Tj=25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source leakage current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS=30 V, VGS=0 V, Tj=150 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=20 V, VDS=0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 67,+ "max": 93,+ "conditions": "VGS=4.5 V, ID=1.85 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 44,+ "max": 57,+ "conditions": "VGS=10 V, ID=2.3 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 207,+ "max": 275,+ "conditions": "VGS=0 V, VDS=15 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 75,+ "max": 100,+ "conditions": "VGS=0 V, VDS=15 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 12,+ "max": 17,+ "conditions": "VGS=0 V, VDS=15 V, f=1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode continuous forward current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode pulse current",+ "symbol": "IS,pulse",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 9,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.83,+ "max": 1.1,+ "conditions": "VGS=0 V, IF=2.3 A, Tj=25 °C",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +473,4 @@ "visibility": { "public": true }-}+}