# BSP135H6327

**Infineon Technologies** · MOSFETs · SOT-223-4

BSP135H6327 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel depletion-mode MOSFET; VGS rated ±20 V and threshold VGS(th) -2.1 to -1 V at VDS=3 V, ID=94 µA. |
| 2 | D | passive | Drain, connected to tab pin 4; VDS 600 V and continuous drain current 0.12 A at TA=25 °C. |
| 3 | S | passive | Source of the MOSFET; diode continuous forward current 0.12 A. |
| 4 | D | passive | Drain tab, the same node as pin 2 and the soldering point for the junction-to-soldering-point thermal resistance of 25 K/W max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 0.12 | A | T A=25 °C | 1 |
| Continuous drain current | ID |  |  | 0.1 | A | T A=70 °C | 1 |
| Pulsed drain current | ID,pulse |  |  | 0.48 | A | T A=25 °C | 1 |
| Reverse diode dv/dt | dv/dt |  |  | 6 | kV/µs | I D=0.12 A, V DS=20 V, di/dt =200 A/µs, T j,max=150 °C | 1 |
| Gate source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power dissipation | Ptot |  |  | 1.8 | W | T A=25 °C | 1 |
| Operating and storage temperature | Tj, Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction - soldering point (pin 4) | RthJS |  |  | 25 | K/W |  | 2 |
| Thermal resistance, SMD version, device on PCB, minimal footprint | RthJA |  |  | 115 | K/W | minimal footprint | 2 |
| Thermal resistance, SMD version, device on PCB, 6 cm2 cooling area | RthJA |  |  | 70 | K/W | 6 cm2 cooling area | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | V GS=-3 V, I D=250 µA | 2 |
| Threshold voltage, sorted band J | VGS(th) | -1.2 |  | -1 | V | V DS=3 V, I D=94 µA | 2 |
| Threshold voltage, sorted band K | VGS(th) | -1.35 |  | -1.15 | V | V DS=3 V, I D=94 µA | 2 |
| Threshold voltage, sorted band L | VGS(th) | -1.5 |  | -1.3 | V | V DS=3 V, I D=94 µA | 2 |
| Threshold voltage, sorted band M | VGS(th) | -1.65 |  | -1.45 | V | V DS=3 V, I D=94 µA | 2 |
| Threshold voltage, sorted band N | VGS(th) | -1.8 |  | -1.6 | V | V DS=3 V, I D=94 µA | 2 |
| Drain-source cutoff current | ID(off) |  |  | 0.1 | µA | V DS=600 V, V GS=-3 V, T j=25 °C | 2 |
| Drain-source cutoff current | ID(off) |  |  | 10 | µA | V DS=600 V, V GS=-3 V, T j=125 °C | 2 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | V GS=20 V, V DS=0 V | 2 |
| On-state drain current | IDSS | 20 |  |  | mA | V GS=0 V, V DS=10 V | 2 |
| Drain-source on-state resistance | RDS(on) |  | 30 | 60 | W | V GS=0 V, I D=0.01A | 2 |
| Drain-source on-state resistance | RDS(on) |  | 25 | 45 | W | V GS=10 V, I D=0.12 A | 2 |
| Transconductance | gfs | 0.08 | 0.16 |  | S | /V DS/>2/I D/R DS(on)max, I D=0.1 A | 2 |
| Input capacitance | Ciss |  | 98 | 146 | pF | V GS=-3 V, V DS=25 V, f =1 MHz | 3 |
| Output capacitance | Coss |  | 8.5 | 13 | pF | V GS=-3 V, V DS=25 V, f =1 MHz | 3 |
| Reverse transfer capacitance | Crss |  | 3.4 | 5.1 | pF | V GS=-3 V, V DS=25 V, f =1 MHz | 3 |
| Turn-on delay time | td(on) |  | 5.4 | 8.1 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 |
| Rise time | tr |  | 5.6 | 8.4 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 |
| Turn-off delay time | td(off) |  | 28 | 42 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 |
| Fall time | tf |  | 182 | 273 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 |
| Gate to source charge | Qgs |  | 0.24 | 0.36 | nC | V DD=400 V, I D=0.1 A, V GS=-3 to 5 V | 3 |
| Gate to drain charge | Qgd |  | 2 | 3 | nC | V DD=400 V, I D=0.1 A, V GS=-3 to 5 V | 3 |
| Gate charge total | Qg |  | 3.7 | 4.9 | nC | V DD=400 V, I D=0.1 A, V GS=-3 to 5 V | 3 |
| Diode continuous forward current | IS |  |  | 0.12 | A |  | 3 |
| Diode pulse current | IS,pulse |  |  | 0.48 | A |  | 3 |
| Diode forward voltage | VSD |  | 0.78 | 1.2 | V | V GS=-3 V, I F=0.12 A, T j=25 °C | 3 |
| Reverse recovery time | trr |  | 87 | 130 | ns | V R=300 V, I F=0.1 A, di F/dt =100 A/µs, T A=25 °C | 3 |
| Reverse recovery charge | Qrr |  | 70 | 104 | nC | V R=300 V, I F=0.1 A, di F/dt =100 A/µs, T A=25 °C | 3 |
| Gate plateau voltage | Vplateau |  | 0.2 |  | V |  | 3 |

## CAD (KiCad official)

- Symbol: `BSP135H6327`
- Footprint: `Package_TO_SOT_SMD:SOT-223`
- 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files: `bsp135h6327-etched.step` / `bsp135h6327-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bsp135h6327.step` / `bsp135h6327.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590253112281112576) (9 pp, sha256 `56981e2a25312ee9`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bsp135h6327-datasheet.pdf)