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BSP135H6327
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Infineon Technologies MOSFETs, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSP135H6327
Infineon Technologies · MOSFETs · SOT-223-4
BSP135H6327 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel depletion-mode MOSFET; VGS rated ±20 V and threshold VGS(th) -2.1 to -1 V at VDS=3 V, ID=94 µA. |
| 2 | D | passive | Drain, connected to tab pin 4; VDS 600 V and continuous drain current 0.12 A at TA=25 °C. |
| 3 | S | passive | Source of the MOSFET; diode continuous forward current 0.12 A. |
| 4 | D | passive | Drain tab, the same node as pin 2 and the soldering point for the junction-to-soldering-point thermal resistance of 25 K/W max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOT-223-4 |
| Category | Transistors/Thyristors |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 0.12 | A | T A=25 °C | 1 | ||
| Continuous drain current | ID | 0.1 | A | T A=70 °C | 1 | ||
| Pulsed drain current | ID,pulse | 0.48 | A | T A=25 °C | 1 | ||
| Reverse diode dv/dt | dv/dt | 6 | kV/µs | I D=0.12 A, V DS=20 V, di/dt =200 A/µs, T j,max=150 °C | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 1.8 | W | T A=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction - soldering point (pin 4) | RthJS | 25 | K/W | 2 | |||
| Thermal resistance, SMD version, device on PCB, minimal footprint | RthJA | 115 | K/W | minimal footprint | 2 | ||
| Thermal resistance, SMD version, device on PCB, 6 cm2 cooling area | RthJA | 70 | K/W | 6 cm2 cooling area | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | V GS=-3 V, I D=250 µA | 2 | ||
| Threshold voltage, sorted band J | VGS(th) | -1.2 | -1 | V | V DS=3 V, I D=94 µA | 2 | |
| Threshold voltage, sorted band K | VGS(th) | -1.35 | -1.15 | V | V DS=3 V, I D=94 µA | 2 | |
| Threshold voltage, sorted band L | VGS(th) | -1.5 | -1.3 | V | V DS=3 V, I D=94 µA | 2 | |
| Threshold voltage, sorted band M | VGS(th) | -1.65 | -1.45 | V | V DS=3 V, I D=94 µA | 2 | |
| Threshold voltage, sorted band N | VGS(th) | -1.8 | -1.6 | V | V DS=3 V, I D=94 µA | 2 | |
| Drain-source cutoff current | ID(off) | 0.1 | µA | V DS=600 V, V GS=-3 V, T j=25 °C | 2 | ||
| Drain-source cutoff current | ID(off) | 10 | µA | V DS=600 V, V GS=-3 V, T j=125 °C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | V GS=20 V, V DS=0 V | 2 | ||
| On-state drain current | IDSS | 20 | mA | V GS=0 V, V DS=10 V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 30 | 60 | W | V GS=0 V, I D=0.01A | 2 | |
| Drain-source on-state resistance | RDS(on) | 25 | 45 | W | V GS=10 V, I D=0.12 A | 2 | |
| Transconductance | gfs | 0.08 | 0.16 | S | /V DS/>2/I D/R DS(on)max, I D=0.1 A | 2 | |
| Input capacitance | Ciss | 98 | 146 | pF | V GS=-3 V, V DS=25 V, f =1 MHz | 3 | |
| Output capacitance | Coss | 8.5 | 13 | pF | V GS=-3 V, V DS=25 V, f =1 MHz | 3 | |
| Reverse transfer capacitance | Crss | 3.4 | 5.1 | pF | V GS=-3 V, V DS=25 V, f =1 MHz | 3 | |
| Turn-on delay time | td(on) | 5.4 | 8.1 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 | |
| Rise time | tr | 5.6 | 8.4 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 | |
| Turn-off delay time | td(off) | 28 | 42 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 | |
| Fall time | tf | 182 | 273 | ns | V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W | 3 | |
| Gate to source charge | Qgs | 0.24 | 0.36 | nC | V DD=400 V, I D=0.1 A, V GS=-3 to 5 V | 3 | |
| Gate to drain charge | Qgd | 2 | 3 | nC | V DD=400 V, I D=0.1 A, V GS=-3 to 5 V | 3 | |
| Gate charge total | Qg | 3.7 | 4.9 | nC | V DD=400 V, I D=0.1 A, V GS=-3 to 5 V | 3 | |
| Diode continuous forward current | IS | 0.12 | A | 3 | |||
| Diode pulse current | IS,pulse | 0.48 | A | 3 | |||
| Diode forward voltage | VSD | 0.78 | 1.2 | V | V GS=-3 V, I F=0.12 A, T j=25 °C | 3 | |
| Reverse recovery time | trr | 87 | 130 | ns | V R=300 V, I F=0.1 A, di F/dt =100 A/µs, T A=25 °C | 3 | |
| Reverse recovery charge | Qrr | 70 | 104 | nC | V R=300 V, I F=0.1 A, di F/dt =100 A/µs, T A=25 °C | 3 | |
| Gate plateau voltage | Vplateau | 0.2 | V | 3 |
CAD (KiCad official)
- Symbol:
BSP135H6327 - Footprint:
Package_TO_SOT_SMD:SOT-223 - 3D model: SOT-223-4 (KiCad packages3D, STEP)
- 3D model files:
bsp135h6327-etched.step/bsp135h6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsp135h6327.step/bsp135h6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (9 pp, sha256
56981e2a25312ee9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).