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BSP135H6327

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Infineon Technologies MOSFETs, SOT-223-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BSP135H6327

Infineon Technologies · MOSFETs · SOT-223-4

BSP135H6327 from Infineon Technologies, in a SOT-223-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel depletion-mode MOSFET; VGS rated ±20 V and threshold VGS(th) -2.1 to -1 V at VDS=3 V, ID=94 µA.
2 D passive Drain, connected to tab pin 4; VDS 600 V and continuous drain current 0.12 A at TA=25 °C.
3 S passive Source of the MOSFET; diode continuous forward current 0.12 A.
4 D passive Drain tab, the same node as pin 2 and the soldering point for the junction-to-soldering-point thermal resistance of 25 K/W max.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOT-223-4
Category Transistors/Thyristors
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 0.12 A T A=25 °C 1
Continuous drain current ID 0.1 A T A=70 °C 1
Pulsed drain current ID,pulse 0.48 A T A=25 °C 1
Reverse diode dv/dt dv/dt 6 kV/µs I D=0.12 A, V DS=20 V, di/dt =200 A/µs, T j,max=150 °C 1
Gate source voltage VGS -20 20 V 1
Power dissipation Ptot 1.8 W T A=25 °C 1
Operating and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction - soldering point (pin 4) RthJS 25 K/W 2
Thermal resistance, SMD version, device on PCB, minimal footprint RthJA 115 K/W minimal footprint 2
Thermal resistance, SMD version, device on PCB, 6 cm2 cooling area RthJA 70 K/W 6 cm2 cooling area 2
Drain-source breakdown voltage V(BR)DSS 600 V V GS=-3 V, I D=250 µA 2
Threshold voltage, sorted band J VGS(th) -1.2 -1 V V DS=3 V, I D=94 µA 2
Threshold voltage, sorted band K VGS(th) -1.35 -1.15 V V DS=3 V, I D=94 µA 2
Threshold voltage, sorted band L VGS(th) -1.5 -1.3 V V DS=3 V, I D=94 µA 2
Threshold voltage, sorted band M VGS(th) -1.65 -1.45 V V DS=3 V, I D=94 µA 2
Threshold voltage, sorted band N VGS(th) -1.8 -1.6 V V DS=3 V, I D=94 µA 2
Drain-source cutoff current ID(off) 0.1 µA V DS=600 V, V GS=-3 V, T j=25 °C 2
Drain-source cutoff current ID(off) 10 µA V DS=600 V, V GS=-3 V, T j=125 °C 2
Gate-source leakage current IGSS 100 nA V GS=20 V, V DS=0 V 2
On-state drain current IDSS 20 mA V GS=0 V, V DS=10 V 2
Drain-source on-state resistance RDS(on) 30 60 W V GS=0 V, I D=0.01A 2
Drain-source on-state resistance RDS(on) 25 45 W V GS=10 V, I D=0.12 A 2
Transconductance gfs 0.08 0.16 S /V DS/>2/I D/R DS(on)max, I D=0.1 A 2
Input capacitance Ciss 98 146 pF V GS=-3 V, V DS=25 V, f =1 MHz 3
Output capacitance Coss 8.5 13 pF V GS=-3 V, V DS=25 V, f =1 MHz 3
Reverse transfer capacitance Crss 3.4 5.1 pF V GS=-3 V, V DS=25 V, f =1 MHz 3
Turn-on delay time td(on) 5.4 8.1 ns V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W 3
Rise time tr 5.6 8.4 ns V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W 3
Turn-off delay time td(off) 28 42 ns V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W 3
Fall time tf 182 273 ns V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 W 3
Gate to source charge Qgs 0.24 0.36 nC V DD=400 V, I D=0.1 A, V GS=-3 to 5 V 3
Gate to drain charge Qgd 2 3 nC V DD=400 V, I D=0.1 A, V GS=-3 to 5 V 3
Gate charge total Qg 3.7 4.9 nC V DD=400 V, I D=0.1 A, V GS=-3 to 5 V 3
Diode continuous forward current IS 0.12 A 3
Diode pulse current IS,pulse 0.48 A 3
Diode forward voltage VSD 0.78 1.2 V V GS=-3 V, I F=0.12 A, T j=25 °C 3
Reverse recovery time trr 87 130 ns V R=300 V, I F=0.1 A, di F/dt =100 A/µs, T A=25 °C 3
Reverse recovery charge Qrr 70 104 nC V R=300 V, I F=0.1 A, di F/dt =100 A/µs, T A=25 °C 3
Gate plateau voltage Vplateau 0.2 V 3

CAD (KiCad official)

  • Symbol: BSP135H6327
  • Footprint: Package_TO_SOT_SMD:SOT-223
  • 3D model: SOT-223-4 (KiCad packages3D, STEP)
  • 3D model files: bsp135h6327-etched.step / bsp135h6327-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bsp135h6327.step / bsp135h6327.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (9 pp, sha256 56981e2a25312ee9, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF