# BRCS9926SC

**Foshan Blue Rocket Elec** · MOSFETs · SOP-8

BRCS9926SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source terminal of the second N-channel MOSFET in the dual Power Trench package. |
| 2 | G2 | input | Gate terminal of the second N-channel MOSFET; the datasheet gives gate-source voltage limits of ±10 V (VGSS). |
| 3 | S1 | passive | Source terminal of the first N-channel MOSFET in the dual Power Trench package. |
| 4 | G1 | input | Gate terminal of the first N-channel MOSFET; the datasheet gives gate-source voltage limits of ±10 V (VGSS). |
| 5 | D1 | passive | Drain terminal of the first N-channel MOSFET; the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |
| 6 | D1 | passive | Drain terminal of the first N-channel MOSFET (second drain pin, internally tied to pin 5); the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |
| 7 | D2 | passive | Drain terminal of the second N-channel MOSFET; the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |
| 8 | D2 | passive | Drain terminal of the second N-channel MOSFET (second drain pin, internally tied to pin 7); the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 20 | V |  | 2 |
| Gate-Source Voltage | VGS | -10 |  | 10 | V |  | 2 |
| Drain Current – Continuous | ID |  |  | 6.5 | A | note 1a | 2 |
| Drain Current – Pulsed | ID |  |  | 20 | A |  | 2 |
| Power Dissipation for Dual Operation | PD |  |  | 2 | W |  | 2 |
| Power Dissipation for Single Operation | PD |  |  | 1.6 | W | note 1a | 2 |
| Power Dissipation for Dual Operation | PD |  |  | 1 | W | note 1b | 2 |
| Power Dissipation for Single Operation | PD |  |  | 0.9 | W | note 1c | 2 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 78 | ℃/W | note 1a | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 40 | ℃/W | note 1 | 2 |
| Operating and Junction Temperature Range | Tj Tstg | -55 |  | 150 | ℃ |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=16V VGS=0V | 2 |
| Gate-Body Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=8.0V VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1 | 1.5 | V | VDS=VGS ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 19 | 24 | mΩ | VGS=4.5V ID=6.5A | 2 |
| Static Drain-Source On-Resistance (TJ=125℃) | RDS(on) |  | 27 | 34 | mΩ | VGS=4.5V ID=6.5A TJ=125℃ | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 23 | 30 | mΩ | VGS=2.5V ID=5.4A | 2 |
| On-State Drain Current | ID(on) |  | 15 |  | A | VDS=5.0V VGS=5.0V | 2 |
| Input Capacitance | Ciss |  | 700 |  | pF | VDS=10V VGS=0V f=1.0MHz | 3 |
| Output Capacitance | Coss |  | 175 |  | pF | VDS=10V VGS=0V f=1.0MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 85 |  | pF | VDS=10V VGS=0V f=1.0MHz | 3 |
| Turn-On Delay Time | td(on) |  | 8 | 16 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 |
| Turn-On Rise Time | tr |  | 10 | 18 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 |
| Turn-Off Delay Time | td(off) |  | 18 | 29 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 |
| Turn-Off Fall Time | tf |  | 5 | 10 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 |
| Total Gate Charge | Qg |  | 7 | 10 | nC | VDD=10V ID=3.0A VGS=4.5 | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 1.3 | A |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  | 0.65 | 1.2 | V | IS=1.3A VGS=0V (note 2) | 3 |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ |  | 14 |  | mV/℃ | ID=250μA Referenced to 25℃ | 2 |
| Gate Threshold Voltage Temperature Coefficient | VGS(th)/TJ |  | -3 |  | mV/℃ | ID=250μA Referenced to 25℃ | 2 |
| Forward Transconductance | gFS |  | 11 |  | S | VDS=5.0V ID=3.0A | 2 |
| Gate-Source Charge | Qgs |  | 1.2 |  | nC | VDD=10V ID=3.0A VGS=4.5 | 3 |
| Gate-Drain Charge | Qgd |  | 1.9 |  | nC | VDD=10V ID=3.0A VGS=4.5 | 3 |

## CAD (KiCad official)

- Symbol: `BRCS9926SC`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `brcs9926sc-etched.step` / `brcs9926sc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `brcs9926sc.step` / `brcs9926sc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Foshan Blue Rocket Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588917826829111296) (8 pp, sha256 `6e6ffc4f9498d0c3`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/brcs9926sc-datasheet.pdf)