component
BRCS9926SC
Public Made by Adomby adom
Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBRCS9926SC
Foshan Blue Rocket Elec · MOSFETs · SOP-8
BRCS9926SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source terminal of the second N-channel MOSFET in the dual Power Trench package. |
| 2 | G2 | input | Gate terminal of the second N-channel MOSFET; the datasheet gives gate-source voltage limits of ±10 V (VGSS). |
| 3 | S1 | passive | Source terminal of the first N-channel MOSFET in the dual Power Trench package. |
| 4 | G1 | input | Gate terminal of the first N-channel MOSFET; the datasheet gives gate-source voltage limits of ±10 V (VGSS). |
| 5 | D1 | passive | Drain terminal of the first N-channel MOSFET; the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |
| 6 | D1 | passive | Drain terminal of the first N-channel MOSFET (second drain pin, internally tied to pin 5); the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |
| 7 | D2 | passive | Drain terminal of the second N-channel MOSFET; the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |
| 8 | D2 | passive | Drain terminal of the second N-channel MOSFET (second drain pin, internally tied to pin 7); the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -10 | 10 | V | 2 | ||
| Drain Current – Continuous | ID | 6.5 | A | note 1a | 2 | ||
| Drain Current – Pulsed | ID | 20 | A | 2 | |||
| Power Dissipation for Dual Operation | PD | 2 | W | 2 | |||
| Power Dissipation for Single Operation | PD | 1.6 | W | note 1a | 2 | ||
| Power Dissipation for Dual Operation | PD | 1 | W | note 1b | 2 | ||
| Power Dissipation for Single Operation | PD | 0.9 | W | note 1c | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 78 | ℃/W | note 1a | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 40 | ℃/W | note 1 | 2 | ||
| Operating and Junction Temperature Range | Tj Tstg | -55 | 150 | ℃ | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=16V VGS=0V | 2 | ||
| Gate-Body Leakage Current Forward | IGSS | 100 | nA | VGS=8.0V VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 1 | 1.5 | V | VDS=VGS ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) | 19 | 24 | mΩ | VGS=4.5V ID=6.5A | 2 | |
| Static Drain-Source On-Resistance (TJ=125℃) | RDS(on) | 27 | 34 | mΩ | VGS=4.5V ID=6.5A TJ=125℃ | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 23 | 30 | mΩ | VGS=2.5V ID=5.4A | 2 | |
| On-State Drain Current | ID(on) | 15 | A | VDS=5.0V VGS=5.0V | 2 | ||
| Input Capacitance | Ciss | 700 | pF | VDS=10V VGS=0V f=1.0MHz | 3 | ||
| Output Capacitance | Coss | 175 | pF | VDS=10V VGS=0V f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 85 | pF | VDS=10V VGS=0V f=1.0MHz | 3 | ||
| Turn-On Delay Time | td(on) | 8 | 16 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 | |
| Turn-On Rise Time | tr | 10 | 18 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 | |
| Turn-Off Delay Time | td(off) | 18 | 29 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 | |
| Turn-Off Fall Time | tf | 5 | 10 | ns | VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V | 3 | |
| Total Gate Charge | Qg | 7 | 10 | nC | VDD=10V ID=3.0A VGS=4.5 | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 1.3 | A | 3 | |||
| Drain-Source Diode Forward Voltage | VSD | 0.65 | 1.2 | V | IS=1.3A VGS=0V (note 2) | 3 | |
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | 14 | mV/℃ | ID=250μA Referenced to 25℃ | 2 | ||
| Gate Threshold Voltage Temperature Coefficient | VGS(th)/TJ | -3 | mV/℃ | ID=250μA Referenced to 25℃ | 2 | ||
| Forward Transconductance | gFS | 11 | S | VDS=5.0V ID=3.0A | 2 | ||
| Gate-Source Charge | Qgs | 1.2 | nC | VDD=10V ID=3.0A VGS=4.5 | 3 | ||
| Gate-Drain Charge | Qgd | 1.9 | nC | VDD=10V ID=3.0A VGS=4.5 | 3 |
CAD (KiCad official)
- Symbol:
BRCS9926SC - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
brcs9926sc-etched.step/brcs9926sc-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);brcs9926sc.step/brcs9926sc.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256
6e6ffc4f9498d0c3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).