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BRCS9926SC

Public Made by Adom

by adom

Foshan Blue Rocket Elec MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 28d ago
viewers brcs9926sc: viewers · Ray 28d ago
brcs9926sc-etched.glb brcs9926sc: factory component page (tier=lcsc) · Ray 28d ago
brcs9926sc-etched.step brcs9926sc: factory component page (tier=lcsc) · Ray 28d ago
brcs9926sc-hero.glb brcs9926sc: hero GLB from the etched model (keeps the MPN mark) · Ray 28d ago
brcs9926sc-hero.overlay.json Publish 0.1.0 · Ray 28d ago
brcs9926sc.glb Publish 0.1.0 · Ray 28d ago
brcs9926sc.kicad_mod Publish 0.1.0 · Ray 28d ago
brcs9926sc.kicad_sym Publish 0.1.0 · Ray 28d ago
brcs9926sc.lbr Publish 0.1.0 · Ray 28d ago
brcs9926sc.step Publish 0.1.0 · Ray 28d ago
package.json Publish 0.1.0 · Ray 28d ago
page.json brcs9926sc: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 24d ago
README.md brcs9926sc: specified limits as data (metadata.characteristics, 34 rows from the datasheet) · Ray 24d ago

BRCS9926SC

Foshan Blue Rocket Elec · MOSFETs · SOP-8

BRCS9926SC from Foshan Blue Rocket Elec, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source terminal of the second N-channel MOSFET in the dual Power Trench package.
2 G2 input Gate terminal of the second N-channel MOSFET; the datasheet gives gate-source voltage limits of ±10 V (VGSS).
3 S1 passive Source terminal of the first N-channel MOSFET in the dual Power Trench package.
4 G1 input Gate terminal of the first N-channel MOSFET; the datasheet gives gate-source voltage limits of ±10 V (VGSS).
5 D1 passive Drain terminal of the first N-channel MOSFET; the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A.
6 D1 passive Drain terminal of the first N-channel MOSFET (second drain pin, internally tied to pin 5); the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A.
7 D2 passive Drain terminal of the second N-channel MOSFET; the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A.
8 D2 passive Drain terminal of the second N-channel MOSFET (second drain pin, internally tied to pin 7); the datasheet gives drain-source voltage of 20 V (VDSS) and continuous drain current of 6.5 A.

Key specifications

Parameter Value
Manufacturer Foshan Blue Rocket Elec
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGS -10 10 V 2
Drain Current – Continuous ID 6.5 A note 1a 2
Drain Current – Pulsed ID 20 A 2
Power Dissipation for Dual Operation PD 2 W 2
Power Dissipation for Single Operation PD 1.6 W note 1a 2
Power Dissipation for Dual Operation PD 1 W note 1b 2
Power Dissipation for Single Operation PD 0.9 W note 1c 2
Thermal Resistance, Junction-to-Ambient RθJA 78 ℃/W note 1a 2
Thermal Resistance, Junction-to-Case RθJC 40 ℃/W note 1 2
Operating and Junction Temperature Range Tj Tstg -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=16V VGS=0V 2
Gate-Body Leakage Current Forward IGSS 100 nA VGS=8.0V VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 1 1.5 V VDS=VGS ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 19 24 mΩ VGS=4.5V ID=6.5A 2
Static Drain-Source On-Resistance (TJ=125℃) RDS(on) 27 34 mΩ VGS=4.5V ID=6.5A TJ=125℃ 2
Static Drain-Source On-Resistance RDS(on) 23 30 mΩ VGS=2.5V ID=5.4A 2
On-State Drain Current ID(on) 15 A VDS=5.0V VGS=5.0V 2
Input Capacitance Ciss 700 pF VDS=10V VGS=0V f=1.0MHz 3
Output Capacitance Coss 175 pF VDS=10V VGS=0V f=1.0MHz 3
Reverse Transfer Capacitance Crss 85 pF VDS=10V VGS=0V f=1.0MHz 3
Turn-On Delay Time td(on) 8 16 ns VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V 3
Turn-On Rise Time tr 10 18 ns VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V 3
Turn-Off Delay Time td(off) 18 29 ns VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V 3
Turn-Off Fall Time tf 5 10 ns VDD=10V ID=1.0A RGEN=6Ω VGS=4.5V 3
Total Gate Charge Qg 7 10 nC VDD=10V ID=3.0A VGS=4.5 3
Maximum Continuous Drain-Source Diode Forward Current IS 1.3 A 3
Drain-Source Diode Forward Voltage VSD 0.65 1.2 V IS=1.3A VGS=0V (note 2) 3
Breakdown Voltage Temperature Coefficient BVDSS/TJ 14 mV/℃ ID=250μA Referenced to 25℃ 2
Gate Threshold Voltage Temperature Coefficient VGS(th)/TJ -3 mV/℃ ID=250μA Referenced to 25℃ 2
Forward Transconductance gFS 11 S VDS=5.0V ID=3.0A 2
Gate-Source Charge Qgs 1.2 nC VDD=10V ID=3.0A VGS=4.5 3
Gate-Drain Charge Qgd 1.9 nC VDD=10V ID=3.0A VGS=4.5 3

CAD (KiCad official)

  • Symbol: BRCS9926SC
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: brcs9926sc-etched.step / brcs9926sc-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); brcs9926sc.step / brcs9926sc.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Foshan Blue Rocket Elec datasheet (8 pp, sha256 6e6ffc4f9498d0c3, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF