# BCM53DSF

**Nexperia** · Bipolar (BJT) · TSOP-6

BCM53DSF from Nexperia, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B1 | input | Base of transistor TR1; the datasheet limits base current to IBlim -0.2 A and peak base current IBM to -0.3 A (single pulse, tp ≤ 1 ms). |
| 2 | B2 | input | Base of transistor TR2; the datasheet limits base current to IBlim -0.2 A and peak base current IBM to -0.3 A (single pulse, tp ≤ 1 ms). |
| 3 | C2 | passive | Collector of transistor TR2; the datasheet limits collector-base voltage VCBO to -100 V, collector current IC to -1 A and peak collector current ICM to -2 A (single pulse, tp ≤ 1 ms). |
| 4 | E2 | passive | Emitter of transistor TR2; the datasheet limits emitter-base voltage VEBO to -5 V. |
| 5 | E1 | passive | Emitter of transistor TR1; the datasheet limits emitter-base voltage VEBO to -5 V. |
| 6 | C1 | passive | Collector of transistor TR1; the datasheet limits collector-base voltage VCBO to -100 V, collector current IC to -1 A and peak collector current ICM to -2 A (single pulse, tp ≤ 1 ms). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO |  |  | -100 | V | open emitter | 3 |
| collector-emitter voltage | VCEO |  |  | -80 | V | open base | 3 |
| emitter-base voltage | VEBO |  |  | -5 | V | open collector | 3 |
| collector current | IC |  |  | -1 | A |  | 3 |
| peak collector current | ICM |  |  | -2 | A | single pulse; tp ≤ 1 ms | 3 |
| limiting base current | IBlim |  |  | -0.2 | A |  | 3 |
| peak base current | IBM |  |  | -0.3 | A | single pulse; tp ≤ 1 ms | 3 |
| total power dissipation (per transistor) | Ptot |  |  | 270 | mW | Tamb ≤ 25 °C [1] | 3 |
| total power dissipation (per transistor, mounting pad 1 cm2) | Ptot |  |  | 320 | mW |  | 3 |
| total power dissipation (per device) | Ptot |  |  | 400 | mW | Tamb ≤ 25 °C [1] | 3 |
| total power dissipation (per device, mounting pad 1 cm2) | Ptot |  |  | 500 | mW |  | 3 |
| junction temperature | Tj |  |  | 150 | °C |  | 3 |
| ambient temperature | Tamb | -55 |  | 150 | °C |  | 3 |
| storage temperature | Tstg | -65 |  | 150 | °C |  | 3 |
| thermal resistance from junction to ambient (per transistor) | Rth(j-a) |  |  | 463 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 |
| thermal resistance from junction to ambient (per transistor) | Rth(j-a) |  |  | 391 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 |
| thermal resistance from junction to solder point (per transistor) | Rth(j-sp) |  |  | 150 | K/W |  | 4 |
| thermal resistance from junction to ambient (per device) | Rth(j-a) |  |  | 313 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 |
| thermal resistance from junction to ambient (per device) | Rth(j-a) |  |  | 250 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 |
| collector-base breakdown voltage | V(BR)CBO | -100 |  |  | V | IC = -100 µA; IE = 0 A | 6 |
| collector-emitter breakdown voltage | V(BR)CEO | -80 |  |  | V | IC = -2 mA; IB = 0 A | 6 |
| emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IC = 0 A; IE = -100 µA | 6 |
| collector-base cut-off current | ICBO |  |  | -100 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 6 |
| collector-base cut-off current | ICBO |  |  | -10 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 6 |
| emitter-base cut-off current | IEBO |  |  | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 6 |
| DC current gain | hFE | 63 |  |  |  | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 6 |
| DC current gain | hFE | 63 |  | 250 |  | VCE = -2 V; IC = -150 mA; Tamb = 25 °C [1] | 6 |
| DC current gain | hFE | 40 |  |  |  | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 6 |
| collector-emitter saturation voltage | VCEsat |  |  | -500 | mV | IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1] | 6 |
| base-emitter voltage | VBE |  |  | -1 | V | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 6 |
| transition frequency | fT | 100 | 140 |  | MHz | VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C | 6 |
| DC current gain matching | hFE1/hFE2 | 0.95 | 1 | 1.05 |  |  | 6 |
| base-emitter voltage matching | VBE1−VBE2 |  |  | 2 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 6 |

## CAD (KiCad official)

- Symbol: `BCM53DSF`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `bcm53dsf-etched.step` / `bcm53dsf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `bcm53dsf.step` / `bcm53dsf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Nexperia datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912962602217472) (13 pp, sha256 `f97102044ba675c5`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/bcm53dsf-datasheet.pdf)