component
BCM53DSF
Public Made by Adomby adom
Nexperia Bipolar (BJT), TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
bcm53dsf: specified limits as data (metadata.characteristics, 33 rows from the datasheet)
2 files changed
+444−1
README.md+40@@ -24,6 +24,46 @@ BCM53DSF from Nexperia, in a TSOP-6. Pinout and pin descriptions extracted from | Category | Transistors/Thyristors | | Pins | 6 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| collector-base voltage | VCBO | | | -100 | V | open emitter | 3 |+| collector-emitter voltage | VCEO | | | -80 | V | open base | 3 |+| emitter-base voltage | VEBO | | | -5 | V | open collector | 3 |+| collector current | IC | | | -1 | A | | 3 |+| peak collector current | ICM | | | -2 | A | single pulse; tp ≤ 1 ms | 3 |+| limiting base current | IBlim | | | -0.2 | A | | 3 |+| peak base current | IBM | | | -0.3 | A | single pulse; tp ≤ 1 ms | 3 |+| total power dissipation (per transistor) | Ptot | | | 270 | mW | Tamb ≤ 25 °C [1] | 3 |+| total power dissipation (per transistor, mounting pad 1 cm2) | Ptot | | | 320 | mW | | 3 |+| total power dissipation (per device) | Ptot | | | 400 | mW | Tamb ≤ 25 °C [1] | 3 |+| total power dissipation (per device, mounting pad 1 cm2) | Ptot | | | 500 | mW | | 3 |+| junction temperature | Tj | | | 150 | °C | | 3 |+| ambient temperature | Tamb | -55 | | 150 | °C | | 3 |+| storage temperature | Tstg | -65 | | 150 | °C | | 3 |+| thermal resistance from junction to ambient (per transistor) | Rth(j-a) | | | 463 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 |+| thermal resistance from junction to ambient (per transistor) | Rth(j-a) | | | 391 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 |+| thermal resistance from junction to solder point (per transistor) | Rth(j-sp) | | | 150 | K/W | | 4 |+| thermal resistance from junction to ambient (per device) | Rth(j-a) | | | 313 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 |+| thermal resistance from junction to ambient (per device) | Rth(j-a) | | | 250 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 |+| collector-base breakdown voltage | V(BR)CBO | -100 | | | V | IC = -100 µA; IE = 0 A | 6 |+| collector-emitter breakdown voltage | V(BR)CEO | -80 | | | V | IC = -2 mA; IB = 0 A | 6 |+| emitter-base breakdown voltage | V(BR)EBO | -5 | | | V | IC = 0 A; IE = -100 µA | 6 |+| collector-base cut-off current | ICBO | | | -100 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 6 |+| collector-base cut-off current | ICBO | | | -10 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 6 |+| emitter-base cut-off current | IEBO | | | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 6 |+| DC current gain | hFE | 63 | | | | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 6 |+| DC current gain | hFE | 63 | | 250 | | VCE = -2 V; IC = -150 mA; Tamb = 25 °C [1] | 6 |+| DC current gain | hFE | 40 | | | | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 6 |+| collector-emitter saturation voltage | VCEsat | | | -500 | mV | IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1] | 6 |+| base-emitter voltage | VBE | | | -1 | V | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 6 |+| transition frequency | fT | 100 | 140 | | MHz | VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C | 6 |+| DC current gain matching | hFE1/hFE2 | 0.95 | 1 | 1.05 | | | 6 |+| base-emitter voltage matching | VBE1−VBE2 | | | 2 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 6 |+ ## CAD (KiCad official) - Symbol: `BCM53DSF`
page.json+404−1@@ -168,6 +168,409 @@ "Package": "TSOP-6", "Category": "Transistors/Thyristors", "Pins": "6"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "f97102044ba675c5",+ "rows": [+ {+ "name": "collector-base voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "open emitter",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -80,+ "conditions": "open base",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "emitter-base voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "open collector",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "peak collector current",+ "symbol": "ICM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -2,+ "conditions": "single pulse; tp ≤ 1 ms",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "limiting base current",+ "symbol": "IBlim",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.2,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "peak base current",+ "symbol": "IBM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -0.3,+ "conditions": "single pulse; tp ≤ 1 ms",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation (per transistor)",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 270,+ "conditions": "Tamb ≤ 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation (per transistor, mounting pad 1 cm2)",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation (per device)",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 400,+ "conditions": "Tamb ≤ 25 °C [1]",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "total power dissipation (per device, mounting pad 1 cm2)",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "ambient temperature",+ "symbol": "Tamb",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient (per transistor)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 463,+ "conditions": "in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient (per transistor)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 391,+ "conditions": "in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to solder point (per transistor)",+ "symbol": "Rth(j-sp)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient (per device)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 313,+ "conditions": "in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "thermal resistance from junction to ambient (per device)",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "collector-base breakdown voltage",+ "symbol": "V(BR)CBO",+ "kind": "electrical",+ "unit": "V",+ "min": -100,+ "typ": null,+ "max": null,+ "conditions": "IC = -100 µA; IE = 0 A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter breakdown voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": -80,+ "typ": null,+ "max": null,+ "conditions": "IC = -2 mA; IB = 0 A",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "emitter-base breakdown voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "IC = 0 A; IE = -100 µA",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "collector-base cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VCB = -30 V; IE = 0 A; Tamb = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "collector-base cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VCB = -30 V; IE = 0 A; Tj = 150 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "emitter-base cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VEB = -5 V; IC = 0 A; Tamb = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 63,+ "typ": null,+ "max": null,+ "conditions": "VCE = -5 V; IC = -2 mA; Tamb = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 63,+ "typ": null,+ "max": 250,+ "conditions": "VCE = -2 V; IC = -150 mA; Tamb = 25 °C [1]",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1]",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": -500,+ "conditions": "IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1]",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "base-emitter voltage",+ "symbol": "VBE",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1]",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "transition frequency",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": 140,+ "max": null,+ "conditions": "VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "DC current gain matching",+ "symbol": "hFE1/hFE2",+ "kind": "electrical",+ "unit": "",+ "min": 0.95,+ "typ": 1,+ "max": 1.05,+ "conditions": "",+ "source_page": 6,+ "source": "datasheet"+ },+ {+ "name": "base-emitter voltage matching",+ "symbol": "VBE1−VBE2",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VCE = -5 V; IC = -2 mA; Tamb = 25 °C",+ "source_page": 6,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -209,4 +612,4 @@ "visibility": { "public": true }-}+}