component
BCM53DSF
Public Made by Adomby adom
Nexperia Bipolar (BJT), TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCM53DSF
Nexperia · Bipolar (BJT) · TSOP-6
BCM53DSF from Nexperia, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B1 | input | Base of transistor TR1; the datasheet limits base current to IBlim -0.2 A and peak base current IBM to -0.3 A (single pulse, tp ≤ 1 ms). |
| 2 | B2 | input | Base of transistor TR2; the datasheet limits base current to IBlim -0.2 A and peak base current IBM to -0.3 A (single pulse, tp ≤ 1 ms). |
| 3 | C2 | passive | Collector of transistor TR2; the datasheet limits collector-base voltage VCBO to -100 V, collector current IC to -1 A and peak collector current ICM to -2 A (single pulse, tp ≤ 1 ms). |
| 4 | E2 | passive | Emitter of transistor TR2; the datasheet limits emitter-base voltage VEBO to -5 V. |
| 5 | E1 | passive | Emitter of transistor TR1; the datasheet limits emitter-base voltage VEBO to -5 V. |
| 6 | C1 | passive | Collector of transistor TR1; the datasheet limits collector-base voltage VCBO to -100 V, collector current IC to -1 A and peak collector current ICM to -2 A (single pulse, tp ≤ 1 ms). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| collector-base voltage | VCBO | -100 | V | open emitter | 3 | ||
| collector-emitter voltage | VCEO | -80 | V | open base | 3 | ||
| emitter-base voltage | VEBO | -5 | V | open collector | 3 | ||
| collector current | IC | -1 | A | 3 | |||
| peak collector current | ICM | -2 | A | single pulse; tp ≤ 1 ms | 3 | ||
| limiting base current | IBlim | -0.2 | A | 3 | |||
| peak base current | IBM | -0.3 | A | single pulse; tp ≤ 1 ms | 3 | ||
| total power dissipation (per transistor) | Ptot | 270 | mW | Tamb ≤ 25 °C [1] | 3 | ||
| total power dissipation (per transistor, mounting pad 1 cm2) | Ptot | 320 | mW | 3 | |||
| total power dissipation (per device) | Ptot | 400 | mW | Tamb ≤ 25 °C [1] | 3 | ||
| total power dissipation (per device, mounting pad 1 cm2) | Ptot | 500 | mW | 3 | |||
| junction temperature | Tj | 150 | °C | 3 | |||
| ambient temperature | Tamb | -55 | 150 | °C | 3 | ||
| storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| thermal resistance from junction to ambient (per transistor) | Rth(j-a) | 463 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 | ||
| thermal resistance from junction to ambient (per transistor) | Rth(j-a) | 391 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 | ||
| thermal resistance from junction to solder point (per transistor) | Rth(j-sp) | 150 | K/W | 4 | |||
| thermal resistance from junction to ambient (per device) | Rth(j-a) | 313 | K/W | in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint | 4 | ||
| thermal resistance from junction to ambient (per device) | Rth(j-a) | 250 | K/W | in free air; [2] FR4 PCB, single-sided copper, tin-plated; mounting pad for collector 1 cm2 | 4 | ||
| collector-base breakdown voltage | V(BR)CBO | -100 | V | IC = -100 µA; IE = 0 A | 6 | ||
| collector-emitter breakdown voltage | V(BR)CEO | -80 | V | IC = -2 mA; IB = 0 A | 6 | ||
| emitter-base breakdown voltage | V(BR)EBO | -5 | V | IC = 0 A; IE = -100 µA | 6 | ||
| collector-base cut-off current | ICBO | -100 | nA | VCB = -30 V; IE = 0 A; Tamb = 25 °C | 6 | ||
| collector-base cut-off current | ICBO | -10 | µA | VCB = -30 V; IE = 0 A; Tj = 150 °C | 6 | ||
| emitter-base cut-off current | IEBO | -100 | nA | VEB = -5 V; IC = 0 A; Tamb = 25 °C | 6 | ||
| DC current gain | hFE | 63 | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 6 | |||
| DC current gain | hFE | 63 | 250 | VCE = -2 V; IC = -150 mA; Tamb = 25 °C [1] | 6 | ||
| DC current gain | hFE | 40 | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 6 | |||
| collector-emitter saturation voltage | VCEsat | -500 | mV | IC = -500 mA; IB = -50 mA; Tamb = 25 °C [1] | 6 | ||
| base-emitter voltage | VBE | -1 | V | VCE = -2 V; IC = -500 mA; Tamb = 25 °C [1] | 6 | ||
| transition frequency | fT | 100 | 140 | MHz | VCE = -5 V; IC = -50 mA; f = 100 MHz; Tamb = 25 °C | 6 | |
| DC current gain matching | hFE1/hFE2 | 0.95 | 1 | 1.05 | 6 | ||
| base-emitter voltage matching | VBE1−VBE2 | 2 | mV | VCE = -5 V; IC = -2 mA; Tamb = 25 °C | 6 |
CAD (KiCad official)
- Symbol:
BCM53DSF - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
bcm53dsf-etched.step/bcm53dsf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcm53dsf.step/bcm53dsf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Nexperia datasheet (13 pp, sha256
f97102044ba675c5, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).