BC808-25LT1G

{
  "schema_version": 1,
  "type": "component",
  "slug": "bc808-25lt1g",
  "title": "BC808-25LT1G",
  "brief": "onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "bc808-25lt1g",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "BC808-25LT1G",
    "manufacturer": "onsemi",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "Bipolar (BJT)",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918398126329856",
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      "lbr": "bc808-25lt1g.lbr"
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    "distributor_links": {
      "lcsc": "C605311",
      "digikey": "BC808-25LT1GOSTR-ND",
      "mouser": "863-BC808-25LT1G"
    },
    "distributor_check": {
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "BC808-25LT1GOSTR-ND",
        "status": "found",
        "lifecycle": "Active"
      },
      "mouser": {
        "pn": "863-BC808-25LT1G",
        "status": "found"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "BASE",
        "type": "passive",
        "description": "Base terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5.0 V minimum."
      },
      {
        "number": "2",
        "name": "EMITTER",
        "type": "passive",
        "description": "Emitter terminal of the PNP transistor; the emitter-base voltage rating VEBO is -5.0 V."
      },
      {
        "number": "3",
        "name": "COLLECTOR",
        "type": "passive",
        "description": "Collector terminal of the PNP transistor; limited to VCEO -25 V, VCBO -30 V and continuous collector current IC -500 mA."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin types are not stated in the datasheet; 'passive' was chosen as the KiCad ERC class for BJT termi; The datasheet gives the emitter-base breakdown test current as 'IE = -1.0 A', which is almost certai; The datasheet's ordering section lists the SOT-23 package only (3000/Tape & Reel); no other package "
        ],
        "pages_sent": 4,
        "cost_usd": 0.0369,
        "at": "2026-10-15T21:47:35"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918398126329856",
        "pages": 4,
        "sha256": "0c78419fd16acd73",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
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        "file": "bc808-25lt1g.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          2.5,
          3,
          1.2
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
        "checked": "2026-10-15",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "sha256": "46830f6e2d7916ab348fe9bad978d5a37aefa8c65a83fec6c0dfa2f56f725608",
        "checked": "2026-10-15",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "onsemi",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "0c78419fd16acd7386d0931bd947d94c8075bf6359df14054a42614d780408d5",
      "rows": [
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          "name": "DC Current Gain (BC808-25 grade, IC = -100 mA)",
          "symbol": "hFE",
          "kind": "electrical",
          "unit": "",
          "min": 160,
          "typ": null,
          "max": 400,
          "conditions": "IC = −100 mA, VCE = −1.0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "DC Current Gain (BC808-25 grade, IC = -500 mA)",
          "symbol": "hFE",
          "kind": "electrical",
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          "min": 40,
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          "conditions": "IC = −500 mA, VCE = −1.0 V",
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          "source": "datasheet"
        },
        {
          "name": "Collector−Emitter Breakdown Voltage",
          "symbol": "V(BR)CEO",
          "kind": "electrical",
          "unit": "V",
          "min": -25,
          "typ": null,
          "max": null,
          "conditions": "IC = −10 mA",
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        },
        {
          "name": "Collector−Emitter Breakdown Voltage",
          "symbol": "V(BR)CES",
          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": null,
          "conditions": "VEB = 0, IC = −10 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Emitter−Base Breakdown Voltage",
          "symbol": "V(BR)EBO",
          "kind": "electrical",
          "unit": "V",
          "min": -5,
          "typ": null,
          "max": null,
          "conditions": "IE = −1.0 A",
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        },
        {
          "name": "Collector Cutoff Current",
          "symbol": "ICBO",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": -100,
          "conditions": "VCB = −20 V",
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          "kind": "electrical",
          "unit": "A",
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          "typ": null,
          "max": -5,
          "conditions": "VCB = −20 V, TJ = 150°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Collector−Emitter Saturation Voltage",
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          "kind": "electrical",
          "unit": "V",
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          "typ": null,
          "max": -0.7,
          "conditions": "IC = −500 mA, IB = −50 mA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
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          "symbol": "VBE(on)",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": -1.2,
          "conditions": "IC = −500 mA, IB = −1.0 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Current−Gain − Bandwidth Product",
          "symbol": "fT",
          "kind": "electrical",
          "unit": "MHz",
          "min": 100,
          "typ": null,
          "max": null,
          "conditions": "IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Collector−Emitter Voltage",
          "symbol": "VCEO",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": -25,
          "conditions": "",
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        },
        {
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        },
        {
          "name": "Emitter−Base Voltage",
          "symbol": "VEBO",
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          "typ": null,
          "max": -5,
          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "Collector Current − Continuous",
          "symbol": "IC",
          "kind": "absolute_maximum",
          "unit": "mAdc",
          "min": null,
          "typ": null,
          "max": -500,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Total Device Dissipation (FR−5 Board)",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "mW",
          "min": null,
          "typ": null,
          "max": 225,
          "conditions": "TA = 25°C (Note 1)",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Derate above 25°C (FR−5 Board)",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "mW/°C",
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          "typ": null,
          "max": 1.8,
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          "source_page": 1,
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        {
          "name": "Total Device Dissipation (Alumina Substrate)",
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          "unit": "mW",
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          "max": 300,
          "conditions": "TA = 25°C (Note 2)",
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          "typ": null,
          "max": 2.4,
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        },
        {
          "name": "Junction and Storage Temperature",
          "symbol": "TJ, Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
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          "conditions": "",
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        },
        {
          "name": "Thermal Resistance, Junction−to−Ambient (FR−5 Board)",
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          "kind": "thermal",
          "unit": "°C/W",
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          "conditions": "FR−5 Board (Note 1)",
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          "symbol": "RJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
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          "conditions": "Alumina Substrate (Note 2)",
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      ]
    }
  },
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  "discovery_triggers": [
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  "discovery_pitch": "BC808-25LT1G (onsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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}