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BC808-25LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BC808-25LT1G

onsemi · Bipolar (BJT) · SOT-23

BC808-25LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5.0 V minimum.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base voltage rating VEBO is -5.0 V.
3 COLLECTOR passive Collector terminal of the PNP transistor; limited to VCEO -25 V, VCBO -30 V and continuous collector current IC -500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (BC808-25 grade, IC = -100 mA) hFE 160 400 IC = −100 mA, VCE = −1.0 V 2
DC Current Gain (BC808-25 grade, IC = -500 mA) hFE 40 IC = −500 mA, VCE = −1.0 V 2
Collector−Emitter Breakdown Voltage V(BR)CEO -25 V IC = −10 mA 2
Collector−Emitter Breakdown Voltage V(BR)CES -30 V VEB = 0, IC = −10 A 2
Emitter−Base Breakdown Voltage V(BR)EBO -5 V IE = −1.0 A 2
Collector Cutoff Current ICBO -100 nA VCB = −20 V 2
Collector Cutoff Current ICBO -5 A VCB = −20 V, TJ = 150°C 2
Collector−Emitter Saturation Voltage VCE(sat) -0.7 V IC = −500 mA, IB = −50 mA 2
Base−Emitter On Voltage VBE(on) -1.2 V IC = −500 mA, IB = −1.0 V 2
Current−Gain − Bandwidth Product fT 100 MHz IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz 2
Collector−Emitter Voltage VCEO -25 V 1
Collector−Base Voltage VCBO -30 V 1
Emitter−Base Voltage VEBO -5 V 1
Collector Current − Continuous IC -500 mAdc 1
Total Device Dissipation (FR−5 Board) PD 225 mW TA = 25°C (Note 1) 1
Derate above 25°C (FR−5 Board) PD 1.8 mW/°C Derate above 25°C (Note 1) 1
Total Device Dissipation (Alumina Substrate) PD 300 mW TA = 25°C (Note 2) 1
Derate above 25°C (Alumina Substrate) PD 2.4 mW/°C Derate above 25°C (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Thermal Resistance, Junction−to−Ambient (FR−5 Board) RJA 556 °C/W FR−5 Board (Note 1) 1
Thermal Resistance, Junction−to−Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: BC808-25LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc808-25lt1g-etched.step / bc808-25lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc808-25lt1g.step / bc808-25lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (4 pp, sha256 0c78419fd16acd73, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF