component
BC808-25LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBC808-25LT1G
onsemi · Bipolar (BJT) · SOT-23
BC808-25LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5.0 V minimum. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage rating VEBO is -5.0 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; limited to VCEO -25 V, VCBO -30 V and continuous collector current IC -500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain (BC808-25 grade, IC = -100 mA) | hFE | 160 | 400 | IC = −100 mA, VCE = −1.0 V | 2 | ||
| DC Current Gain (BC808-25 grade, IC = -500 mA) | hFE | 40 | IC = −500 mA, VCE = −1.0 V | 2 | |||
| Collector−Emitter Breakdown Voltage | V(BR)CEO | -25 | V | IC = −10 mA | 2 | ||
| Collector−Emitter Breakdown Voltage | V(BR)CES | -30 | V | VEB = 0, IC = −10 A | 2 | ||
| Emitter−Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = −1.0 A | 2 | ||
| Collector Cutoff Current | ICBO | -100 | nA | VCB = −20 V | 2 | ||
| Collector Cutoff Current | ICBO | -5 | A | VCB = −20 V, TJ = 150°C | 2 | ||
| Collector−Emitter Saturation Voltage | VCE(sat) | -0.7 | V | IC = −500 mA, IB = −50 mA | 2 | ||
| Base−Emitter On Voltage | VBE(on) | -1.2 | V | IC = −500 mA, IB = −1.0 V | 2 | ||
| Current−Gain − Bandwidth Product | fT | 100 | MHz | IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz | 2 | ||
| Collector−Emitter Voltage | VCEO | -25 | V | 1 | |||
| Collector−Base Voltage | VCBO | -30 | V | 1 | |||
| Emitter−Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current − Continuous | IC | -500 | mAdc | 1 | |||
| Total Device Dissipation (FR−5 Board) | PD | 225 | mW | TA = 25°C (Note 1) | 1 | ||
| Derate above 25°C (FR−5 Board) | PD | 1.8 | mW/°C | Derate above 25°C (Note 1) | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | TA = 25°C (Note 2) | 1 | ||
| Derate above 25°C (Alumina Substrate) | PD | 2.4 | mW/°C | Derate above 25°C (Note 2) | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction−to−Ambient (FR−5 Board) | RJA | 556 | °C/W | FR−5 Board (Note 1) | 1 | ||
| Thermal Resistance, Junction−to−Ambient (Alumina Substrate) | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
BC808-25LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc808-25lt1g-etched.step/bc808-25lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc808-25lt1g.step/bc808-25lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (4 pp, sha256
0c78419fd16acd73, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).