main
History Download
Ray bc807-25lt1g: specified limits as data (metadata.characteristics, 19 rows from the datasheet) b0b7f52

BC807-25LT1G

onsemi · Bipolar (BJT) · SOT-23

BC807-25LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base control terminal; maximum emitter-base voltage VEBO = −5.0 V.
2 EMITTER passive Emitter terminal of main current path; maximum emitter-base voltage VEBO = −5.0 V.
3 COLLECTOR passive Collector terminal of main current path; maximum collector-emitter voltage VCEO = −45 V and maximum continuous collector current IC = −500 mA.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage V(BR)CEO -45 V IC = −10 mA 2
Collector-Emitter Breakdown Voltage V(BR)CES -50 V VEB = 0, IC = −10 A 2
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = −1.0 A 2
Collector Cutoff Current ICBO -100 nA VCB = −20 V 2
Collector Cutoff Current ICBO -5 A VCB = −20 V, TJ = 150°C 2
DC Current Gain (BC807-25) hFE 160 400 IC = −100 mA, VCE = −1.0 V 2
DC Current Gain (BC807-25) hFE 40 IC = −500 mA, VCE = −1.0 V 2
Collector-Emitter Saturation Voltage VCE(sat) -0.7 V IC = −500 mA, IB = −50 mA 2
Base-Emitter On Voltage VBE(on) -1.2 V IC = −500 mA, VCE = −1.0 V 2
Current-Gain-Bandwidth Product fT 100 MHz IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz 2
Collector-Emitter Voltage VCEO -45 V 1
Collector-Base Voltage VCBO -50 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Current - Continuous IC -500 mAdc 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 1

CAD (KiCad official)

  • Symbol: BC807-25LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bc807-25lt1g-etched.step / bc807-25lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bc807-25lt1g.step / bc807-25lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 8095a17325cb175d, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF