component
BC807-25LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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bc807-25lt1g: specified limits as data (metadata.characteristics, 19 rows from the datasheet)
2 files changed
+261
README.md+26@@ -21,6 +21,32 @@ BC807-25LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted fro | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | | | V | IC = −10 mA | 2 |+| Collector-Emitter Breakdown Voltage | V(BR)CES | -50 | | | V | VEB = 0, IC = −10 A | 2 |+| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | V | IE = −1.0 A | 2 |+| Collector Cutoff Current | ICBO | | | -100 | nA | VCB = −20 V | 2 |+| Collector Cutoff Current | ICBO | | | -5 | A | VCB = −20 V, TJ = 150°C | 2 |+| DC Current Gain (BC807-25) | hFE | 160 | | 400 | | IC = −100 mA, VCE = −1.0 V | 2 |+| DC Current Gain (BC807-25) | hFE | 40 | | | | IC = −500 mA, VCE = −1.0 V | 2 |+| Collector-Emitter Saturation Voltage | VCE(sat) | | | -0.7 | V | IC = −500 mA, IB = −50 mA | 2 |+| Base-Emitter On Voltage | VBE(on) | | | -1.2 | V | IC = −500 mA, VCE = −1.0 V | 2 |+| Current-Gain-Bandwidth Product | fT | 100 | | | MHz | IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz | 2 |+| Collector-Emitter Voltage | VCEO | | | -45 | V | | 1 |+| Collector-Base Voltage | VCBO | | | -50 | V | | 1 |+| Emitter-Base Voltage | VEBO | | | -5 | V | | 1 |+| Collector Current - Continuous | IC | | | -500 | mAdc | | 1 |+| Junction and Storage Temperature | TJ, Tstg | -55 | | 150 | °C | | 1 |+| Total Device Dissipation (FR-5 Board) | PD | | | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 |+| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | | | 556 | °C/W | FR-5 Board (Note 1) | 1 |+| Total Device Dissipation (Alumina Substrate) | PD | | | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 |+| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | | | 417 | °C/W | Alumina Substrate (Note 2) | 1 |+ ## CAD (KiCad official) - Symbol: `BC807-25LT1G`
page.json+235@@ -133,6 +133,241 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "8095a17325cb175d",+ "rows": [+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CEO",+ "kind": "electrical",+ "unit": "V",+ "min": -45,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Breakdown Voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": -50,+ "typ": null,+ "max": null,+ "conditions": "VEB = 0, IC = −10 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Breakdown Voltage",+ "symbol": "V(BR)EBO",+ "kind": "electrical",+ "unit": "V",+ "min": -5,+ "typ": null,+ "max": null,+ "conditions": "IE = −1.0 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VCB = −20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector Cutoff Current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VCB = −20 V, TJ = 150°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain (BC807-25)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 160,+ "typ": null,+ "max": 400,+ "conditions": "IC = −100 mA, VCE = −1.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC Current Gain (BC807-25)",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "",+ "min": 40,+ "typ": null,+ "max": null,+ "conditions": "IC = −500 mA, VCE = −1.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Saturation Voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -0.7,+ "conditions": "IC = −500 mA, IB = −50 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Base-Emitter On Voltage",+ "symbol": "VBE(on)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "IC = −500 mA, VCE = −1.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Current-Gain-Bandwidth Product",+ "symbol": "fT",+ "kind": "electrical",+ "unit": "MHz",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-Emitter Voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -45,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector-Base Voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -50,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Emitter-Base Voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Collector Current - Continuous",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mAdc",+ "min": null,+ "typ": null,+ "max": -500,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature",+ "symbol": "TJ, Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (FR-5 Board)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 225,+ "conditions": "FR-5 Board (Note 1), TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (FR-5 Board)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 556,+ "conditions": "FR-5 Board (Note 1)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Device Dissipation (Alumina Substrate)",+ "symbol": "PD",+ "kind": "thermal",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Alumina Substrate (Note 2), TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient (Alumina Substrate)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Alumina Substrate (Note 2)",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],