component
BC807-25LT1G
Public Made by Adomby adom
onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
BC807-25LT1G
onsemi · Bipolar (BJT) · SOT-23
BC807-25LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base control terminal; maximum emitter-base voltage VEBO = −5.0 V. |
| 2 | EMITTER | passive | Emitter terminal of main current path; maximum emitter-base voltage VEBO = −5.0 V. |
| 3 | COLLECTOR | passive | Collector terminal of main current path; maximum collector-emitter voltage VCEO = −45 V and maximum continuous collector current IC = −500 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -45 | V | IC = −10 mA | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CES | -50 | V | VEB = 0, IC = −10 A | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = −1.0 A | 2 | ||
| Collector Cutoff Current | ICBO | -100 | nA | VCB = −20 V | 2 | ||
| Collector Cutoff Current | ICBO | -5 | A | VCB = −20 V, TJ = 150°C | 2 | ||
| DC Current Gain (BC807-25) | hFE | 160 | 400 | IC = −100 mA, VCE = −1.0 V | 2 | ||
| DC Current Gain (BC807-25) | hFE | 40 | IC = −500 mA, VCE = −1.0 V | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.7 | V | IC = −500 mA, IB = −50 mA | 2 | ||
| Base-Emitter On Voltage | VBE(on) | -1.2 | V | IC = −500 mA, VCE = −1.0 V | 2 | ||
| Current-Gain-Bandwidth Product | fT | 100 | MHz | IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz | 2 | ||
| Collector-Emitter Voltage | VCEO | -45 | V | 1 | |||
| Collector-Base Voltage | VCBO | -50 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current - Continuous | IC | -500 | mAdc | 1 | |||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Total Device Dissipation (FR-5 Board) | PD | 225 | mW | FR-5 Board (Note 1), TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W | FR-5 Board (Note 1) | 1 | ||
| Total Device Dissipation (Alumina Substrate) | PD | 300 | mW | Alumina Substrate (Note 2), TA = 25°C | 1 | ||
| Thermal Resistance, Junction-to-Ambient (Alumina Substrate) | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 |
CAD (KiCad official)
- Symbol:
BC807-25LT1G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
bc807-25lt1g-etched.step/bc807-25lt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bc807-25lt1g.step/bc807-25lt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (10 pp, sha256
8095a17325cb175d, retrieved 2026-09-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).