component

BAV70WT1G

Public Made by Adom

by adom

onsemi Switching Diodes, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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BAV70WT1G

onsemi · Switching Diodes · SOT-323-3

BAV70WT1G from onsemi, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 ANODE passive Anode of one of the two diodes in this common-cathode dual switching diode, rated for a 100 V reverse voltage and 200 mA forward current.
2 ANODE passive Anode of the second diode in this common-cathode dual switching diode, rated for a 100 V reverse voltage and 200 mA forward current.
3 CATHODE passive Common cathode shared by both diodes of the dual switching diode, with a maximum reverse voltage of 100 V.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-323-3
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage V(BR) 100 V I(BR) = 100 µA 2
Reverse Voltage Leakage Current IR 1 µA VR = 100 V 2
Reverse Voltage Leakage Current IR 100 nA VR = 50 V 2
Forward Voltage VF 715 mV IF = 1.0 mA 2
Forward Voltage VF 855 mV IF = 10 mA 2
Forward Voltage VF 1000 mV IF = 50 mA 2
Forward Voltage VF 1250 mV IF = 150 mA 2
Diode Capacitance CD 1.5 pF VR = 0 V, f = 1.0 MHz 2
Reverse Recovery Time trr 6 ns IF = IR = 10 mA, RL = 100 Ω, IR(REC) = 1.0 mA (Figure 1) 2
Forward Recovery Voltage VRF 1.75 V IF = 10 mA, tr = 20 ns (Figure 2) 2
Reverse Voltage VR 100 V Maximum Ratings, TA = 25°C 1
Forward Current IF 200 mA Maximum Ratings, TA = 25°C 1
Peak Forward Surge Current IFM(surge) 500 mA Maximum Ratings, TA = 25°C 1
Total Device Dissipation FR-5 Board PD 200 mW TA = 25°C (Note 1) 1
Derate above 25°C, FR-5 Board PD 1.6 mW/°C Derate above 25°C (Note 1) 1
Thermal Resistance, Junction-to-Ambient, FR-5 Board RJA 625 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation Alumina Substrate PD 300 mW TA = 25°C (Note 2) 1
Derate above 25°C, Alumina Substrate PD 2.4 mW/°C Derate above 25°C (Note 2) 1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate RJA 417 °C/W Alumina Substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BAV70WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323-3 (KiCad packages3D, STEP)
  • 3D model files: bav70wt1g-etched.step / bav70wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav70wt1g.step / bav70wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 dd81240ff69d65de, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF