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Generated by kicad-footprint-generator · KiCad file format 20260206

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BAV70WT1G

onsemi · Switching Diodes · SOT-323-3

BAV70WT1G from onsemi, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	ANODE	passive	Anode of one of the two diodes in this common-cathode dual switching diode, rated for a 100 V reverse voltage and 200 mA forward current.
2	ANODE	passive	Anode of the second diode in this common-cathode dual switching diode, rated for a 100 V reverse voltage and 200 mA forward current.
3	CATHODE	passive	Common cathode shared by both diodes of the dual switching diode, with a maximum reverse voltage of 100 V.

Key specifications

Parameter	Value
Manufacturer	onsemi
Package	SOT-323-3
Category	Diodes
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Reverse Breakdown Voltage	V(BR)	100		V	I(BR) = 100 µA	2
Reverse Voltage Leakage Current	IR		1	µA	VR = 100 V	2
Reverse Voltage Leakage Current	IR		100	nA	VR = 50 V	2
Forward Voltage	VF		715	mV	IF = 1.0 mA	2
Forward Voltage	VF		855	mV	IF = 10 mA	2
Forward Voltage	VF		1000	mV	IF = 50 mA	2
Forward Voltage	VF		1250	mV	IF = 150 mA	2
Diode Capacitance	CD		1.5	pF	VR = 0 V, f = 1.0 MHz	2
Reverse Recovery Time	trr		6	ns	IF = IR = 10 mA, RL = 100 Ω, IR(REC) = 1.0 mA (Figure 1)	2
Forward Recovery Voltage	VRF		1.75	V	IF = 10 mA, tr = 20 ns (Figure 2)	2
Reverse Voltage	VR		100	V	Maximum Ratings, TA = 25°C	1
Forward Current	IF		200	mA	Maximum Ratings, TA = 25°C	1
Peak Forward Surge Current	IFM(surge)		500	mA	Maximum Ratings, TA = 25°C	1
Total Device Dissipation FR-5 Board	PD		200	mW	TA = 25°C (Note 1)	1
Derate above 25°C, FR-5 Board	PD		1.6	mW/°C	Derate above 25°C (Note 1)	1
Thermal Resistance, Junction-to-Ambient, FR-5 Board	RJA		625	°C/W	FR-5 Board (Note 1)	1
Total Device Dissipation Alumina Substrate	PD		300	mW	TA = 25°C (Note 2)	1
Derate above 25°C, Alumina Substrate	PD		2.4	mW/°C	Derate above 25°C (Note 2)	1
Thermal Resistance, Junction-to-Ambient, Alumina Substrate	RJA		417	°C/W	Alumina Substrate (Note 2)	1
Junction and Storage Temperature	TJ, Tstg	-55	150	°C		1

CAD (KiCad official)

Symbol: BAV70WT1G
Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
3D model: SOT-323-3 (KiCad packages3D, STEP)
3D model files: bav70wt1g-etched.step / bav70wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bav70wt1g.step / bav70wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: onsemi datasheet (5 pp, sha256 dd81240ff69d65de, retrieved 2026-10-26, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus off (skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF