component
BAV70WT1G
Public Made by Adomby adom
onsemi Switching Diodes, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBAV70WT1G
onsemi · Switching Diodes · SOT-323-3
BAV70WT1G from onsemi, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode of one of the two diodes in this common-cathode dual switching diode, rated for a 100 V reverse voltage and 200 mA forward current. |
| 2 | ANODE | passive | Anode of the second diode in this common-cathode dual switching diode, rated for a 100 V reverse voltage and 200 mA forward current. |
| 3 | CATHODE | passive | Common cathode shared by both diodes of the dual switching diode, with a maximum reverse voltage of 100 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-323-3 |
| Category | Diodes |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Breakdown Voltage | V(BR) | 100 | V | I(BR) = 100 µA | 2 | ||
| Reverse Voltage Leakage Current | IR | 1 | µA | VR = 100 V | 2 | ||
| Reverse Voltage Leakage Current | IR | 100 | nA | VR = 50 V | 2 | ||
| Forward Voltage | VF | 715 | mV | IF = 1.0 mA | 2 | ||
| Forward Voltage | VF | 855 | mV | IF = 10 mA | 2 | ||
| Forward Voltage | VF | 1000 | mV | IF = 50 mA | 2 | ||
| Forward Voltage | VF | 1250 | mV | IF = 150 mA | 2 | ||
| Diode Capacitance | CD | 1.5 | pF | VR = 0 V, f = 1.0 MHz | 2 | ||
| Reverse Recovery Time | trr | 6 | ns | IF = IR = 10 mA, RL = 100 Ω, IR(REC) = 1.0 mA (Figure 1) | 2 | ||
| Forward Recovery Voltage | VRF | 1.75 | V | IF = 10 mA, tr = 20 ns (Figure 2) | 2 | ||
| Reverse Voltage | VR | 100 | V | Maximum Ratings, TA = 25°C | 1 | ||
| Forward Current | IF | 200 | mA | Maximum Ratings, TA = 25°C | 1 | ||
| Peak Forward Surge Current | IFM(surge) | 500 | mA | Maximum Ratings, TA = 25°C | 1 | ||
| Total Device Dissipation FR-5 Board | PD | 200 | mW | TA = 25°C (Note 1) | 1 | ||
| Derate above 25°C, FR-5 Board | PD | 1.6 | mW/°C | Derate above 25°C (Note 1) | 1 | ||
| Thermal Resistance, Junction-to-Ambient, FR-5 Board | RJA | 625 | °C/W | FR-5 Board (Note 1) | 1 | ||
| Total Device Dissipation Alumina Substrate | PD | 300 | mW | TA = 25°C (Note 2) | 1 | ||
| Derate above 25°C, Alumina Substrate | PD | 2.4 | mW/°C | Derate above 25°C (Note 2) | 1 | ||
| Thermal Resistance, Junction-to-Ambient, Alumina Substrate | RJA | 417 | °C/W | Alumina Substrate (Note 2) | 1 | ||
| Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
BAV70WT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files:
bav70wt1g-etched.step/bav70wt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bav70wt1g.step/bav70wt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (5 pp, sha256
dd81240ff69d65de, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusoff(skipped (clean text read)), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).