main
Ray Publish 0.1.2 ba5667b
{
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  "slug": "asw65r110e",
  "title": "ASW65R110E",
  "brief": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.2",
  "license": "CC-BY-SA-4.0",
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    "package": "TO-247",
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    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "lbr": "asw65r110e.lbr"
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    "distributor_links": {
      "lcsc": "C5440019"
    },
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      "checked_at": "2026-11-07T04:17:46Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; controls switching, with threshold VGS(th) 2.8 to 4.2 V and static VGS limit of ±20 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain, also connected to the metal tab; drain-source breakdown is 655 V min and VDS is 700 V at Tj,max."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; continuous drain current is 30 A at TC=25°C and pulsed drain current is 90 A."
      }
    ],
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      "factory_chain": {
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        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The tab is shown as Drain (Pin 2 / Tab) in the internal circuit diagram and has no separate pin numb; The datasheet lists Tstg and Tj max as 100 °C, which is unusually low for this part class. This does",
          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "pages_sent": 10,
        "cost_usd": 0.2028,
        "at": "2026-11-07T04:17:39"
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        "pages": 10,
        "sha256": "70ba298696ac422d",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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      "footprint": "viewers/footprint.html"
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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        "zmin_mm": -15.83,
        "centre_offset_mm": 0.185,
        "footprint_binding": "identity",
        "sha256": "ec0db59b04bcea2e0db6f976bf3ab8644e761c8b0059239f77f4febd6dc9eff4",
        "checked": "2026-11-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
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        "checked": "2026-11-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "ANHI",
      "Package": "TO-247",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "70ba298696ac422d8659d5404cadb1429c57e4551265b610edb2247c849c1334",
      "rows": [
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          "name": "Continuous drain current",
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          "unit": "A",
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          "typ": null,
          "max": 30,
          "conditions": "TC=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID,pulse",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 90,
          "conditions": "TC=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 2528,
          "conditions": "",
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          "source": "datasheet"
        },
        {
          "name": "MOSFET dv/dt ruggedness",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 36,
          "conditions": "VDS=0...400V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate source voltage (static)",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "static;",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate source voltage (dynamic)",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "AC (f>1 Hz)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 277.8,
          "conditions": "TC=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Storage temperature",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 100,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature",
          "symbol": "Tj",
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          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 100,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Reverse diode dv/dt",
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          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "VDS=0...400V, ISD<=48A, Tj=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.45,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 62,
          "conditions": "device on PCB, minimal footprint",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 655,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=10mA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "V(GS)th",
          "kind": "electrical",
          "unit": "V",
          "min": 2.8,
          "typ": null,
          "max": 4.2,
          "conditions": "VDS=VGS, ID=250uA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "uA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=650V, VGS=0V, Tj=25°C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate-source leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VGS=30V, VDS=0V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 0.095,
          "max": 0.11,
          "conditions": "VGS=10V, ID=14A, Tj=25°C",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
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    "viewers",
    "readme",
    "breadcrumbs",
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  ],
  "discovery_triggers": [
    "asw65r110e"
  ],
  "discovery_pitch": "ASW65R110E (ANHI) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray"
  },
  "dependencies": {},
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    "path": "docs/hero.png"
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  "visibility": "public",
  "description": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "org": "adom"
}