component
ASW65R110E
Public Made by Adomby adom
ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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package.json+229−3@@ -1,6 +1,6 @@ { "slug": "asw65r110e",- "version": "0.1.1",+ "version": "0.1.2", "type": "component", "description": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "tags": [@@ -44,7 +44,7 @@ "symbol": "asw65r110e.kicad_sym", "footprint": "asw65r110e.kicad_mod", "model_3d": "asw65r110e-hero.glb",- "model_3d_plain": "asw65r110e-etched.glb",+ "model_3d_plain": "asw65r110e.glb", "model_3d_step": "asw65r110e-etched.step", "model_3d_step_plain": "asw65r110e.step", "lbr": "asw65r110e.lbr"@@ -160,5 +160,231 @@ "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)" } ]- }+ },+ "title": "ASW65R110E",+ "brief": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "metadata": {+ "specs": {+ "Manufacturer": "ANHI",+ "Package": "TO-247",+ "Category": "Transistors/Thyristors",+ "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "70ba298696ac422d8659d5404cadb1429c57e4551265b610edb2247c849c1334",+ "rows": [+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "ID,pulse",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 90,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 2528,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 36,+ "conditions": "VDS=0...400V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage (static)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "static;",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate source voltage (dynamic)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "AC (f>1 Hz)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 277.8,+ "conditions": "TC=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse diode dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "VDS=0...400V, ISD<=48A, Tj=25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.45,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction - ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "device on PCB, minimal footprint",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 655,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=10mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "V(GS)th",+ "kind": "electrical",+ "unit": "V",+ "min": 2.8,+ "typ": null,+ "max": 4.2,+ "conditions": "VDS=VGS, ID=250uA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=650V, VGS=0V, Tj=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=30V, VDS=0V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.095,+ "max": 0.11,+ "conditions": "VGS=10V, ID=14A, Tj=25°C",+ "source_page": 4,+ "source": "datasheet"+ }+ ]+ }+ },+ "discovery_triggers": [+ "asw65r110e"+ ],+ "discovery_pitch": "ASW65R110E (ANHI) component page: datasheet pinout, KiCad symbol, footprint and 3D.",+ "visibility": "public" }
page.json+3−5@@ -4,7 +4,7 @@ "slug": "asw65r110e", "title": "ASW65R110E", "brief": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",- "version": "0.1.1",+ "version": "0.1.2", "license": "CC-BY-SA-4.0", "tags": [ "component",@@ -25,7 +25,7 @@ "symbol": "asw65r110e.kicad_sym", "footprint": "asw65r110e.kicad_mod", "model_3d": "asw65r110e-hero.glb",- "model_3d_plain": "asw65r110e-etched.glb",+ "model_3d_plain": "asw65r110e.glb", "model_3d_step": "asw65r110e-etched.step", "model_3d_step_plain": "asw65r110e.step", "lbr": "asw65r110e.lbr"@@ -399,9 +399,7 @@ "asw65r110e-etched.glb", "asw65r110e-etched.step" ],- "visibility": {- "public": true- },+ "visibility": "public", "description": "ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.", "org": "adom" }