component

ASW65R110E

Public Made by Adom

by adom

ANHI MOSFETs, TO-247. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsasw65r110efactory-2.0.0extractor-text

Changed since verified ASW65R110E

by Ray · last 7 Nov 2026 · 1 record · files changed since
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinschanged since
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: ASW65R110E · TO-247 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-eifdfpcx/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files! asw65r110e.kicad_sym✓ asw65r110e.kicad_mod✓ asw65r110e.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray
viewers asw65r110e: symbol viewer · Ray
asw65r110e-etched.glb Publish 0.1.0 · Ray
asw65r110e-etched.step asw65r110e: factory component page (tier=lcsc) · Ray
asw65r110e-hero.glb asw65r110e: pin labels beside their pads (component-hero#2, hero_glb a625f4b) · Ray
asw65r110e-hero.overlay.json asw65r110e: pin labels beside their pads (component-hero#2, hero_glb a625f4b) · Ray
asw65r110e.glb Publish 0.1.0 · Ray
asw65r110e.kicad_mod Publish 0.1.0 · Ray
asw65r110e.kicad_sym asw65r110e: one-pass backfill (symbol Device:Q_NMOS) · Ray
asw65r110e.lbr asw65r110e: one-pass backfill (symbol Device:Q_NMOS) · Ray
asw65r110e.step Publish 0.1.0 · Ray
package.json Publish 0.1.2 · Ray
page.json Publish 0.1.2 · Ray
README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

ASW65R110E

ANHI · MOSFETs · TO-247

ASW65R110E from ANHI, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls switching, with threshold VGS(th) 2.8 to 4.2 V and static VGS limit of ±20 V.
2 D passive Drain, also connected to the metal tab; drain-source breakdown is 655 V min and VDS is 700 V at Tj,max.
3 S passive Source; continuous drain current is 30 A at TC=25°C and pulsed drain current is 90 A.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-247
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 30 A TC=25°C 2
Pulsed drain current ID,pulse 90 A TC=25°C 2
Avalanche energy, single pulse EAS 2528 mJ 2
MOSFET dv/dt ruggedness dv/dt 36 V/ns VDS=0...400V 2
Gate source voltage (static) VGS -20 20 V static; 2
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 2
Power dissipation Ptot 277.8 W TC=25°C 2
Storage temperature Tstg -55 100 °C 2
Operating junction temperature Tj -55 100 °C 2
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=48A, Tj=25°C 2
Thermal resistance, junction - case RthJC 0.45 °C/W 3
Thermal resistance, junction - ambient RthJA 62 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=10mA 4
Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1 uA VDS=650V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=30V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.095 0.11 Ω VGS=10V, ID=14A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: ASW65R110E
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247 (KiCad packages3D, STEP)
  • 3D model files: asw65r110e-etched.step / asw65r110e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asw65r110e.step / asw65r110e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (10 pp, sha256 70ba298696ac422d, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF