ASDM30N120Q-R

{
  "schema_version": 1,
  "type": "component",
  "slug": "asdm30n120q-r",
  "title": "ASDM30N120Q-R",
  "brief": "ASDsemi MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "asdm30n120q-r",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "ASDM30N120Q-R",
    "manufacturer": "ASDsemi",
    "package": "DFN5x6-8",
    "pin_count": 9,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225332294230016",
    "parts": {
      "symbol": "asdm30n120q-r.kicad_sym",
      "footprint": "asdm30n120q-r.kicad_mod",
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    "distributor_links": {
      "lcsc": "C2972859"
    },
    "distributor_check": {
      "checked_at": "2026-10-09T18:13:01Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET (pins 1-3 are source); pin 1 is marked by the dot; drain-source breakdown 30 V, diode continuous forward current 120 A at TC=25°C."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET (pins 1-3 are source), tied with pins 1 and 3; continuous drain current 120 A at TC=25°C and 80 A at TC=100°C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET (pins 1-3 are source), tied with pins 1 and 2; pulsed drain current 480 A at TC=25°C."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the MOSFET; gate-source voltage limit ±20 V, threshold 1.0 to 2 V at ID=250μA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET (pins 5-8 are drain); VDS rating 30 V, RDS(on) typ 2.1 mΩ at VGS=10 V."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET (pins 5-8 are drain), tied with pins 5, 7 and 8; VDS rating 30 V."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET (pins 5-8 are drain), tied with pins 5, 6 and 8; VDS rating 30 V."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET (pins 5-8 are drain), tied with pins 5, 6 and 7; VDS rating 30 V."
      },
      {
        "number": "9",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pinout taken from the top-view drawing and symbol on page 1: S=1-3, G=4, D=5-8. The page 6 package d; The datasheet text says 'Very low on-resistance RDS(on) @ VGS=4.5 V' but gives no limit for the part",
          "exposed pad 9 added from the footprint",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 7,
        "cost_usd": 0.2355,
        "at": "2026-10-09T18:10:55"
      },
      "datasheet": {
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        "pages": 7,
        "sha256": "e8a3ff68c653447a",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 9,
        "described": 9,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          6,
          4.98,
          0.92
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "13e5a2a05f78c2a0952534b2fb187d0be154d366a431374e398c7e2032779f1b",
        "checked": "2026-10-09",
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        "checked": "2026-10-09",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "ASDsemi",
      "Package": "DFN5x6-8",
      "Category": "Transistors/Thyristors",
      "Pins": "9"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "e8a3ff68c653447a",
      "rows": [
        {
          "name": "Drain-Source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 30,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=24V,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current (high temperature)",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "VDS=24V,VGS=0V, Tj=85°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V,VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
          "min": 1,
          "typ": 1.5,
          "max": 2,
          "conditions": "VDS=VGS,ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance (VGS=10V)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 2.1,
          "max": 3.5,
          "conditions": "VGS=10V, ID=30A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance (VGS=4.5V)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 3.6,
          "max": 4.5,
          "conditions": "VGS=4.5V, ID=30A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Forward on voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
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          "typ": 0.79,
          "max": 1.2,
          "conditions": "ISD=20A,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
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          "typ": null,
          "max": 120,
          "conditions": "VGS=10V, TC=25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Continuous drain current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 80,
          "conditions": "VGS=10V, TC=100°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Diode continuous forward current",
          "symbol": "IS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 120,
          "conditions": "TC=25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulse drain current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
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          "max": 480,
          "conditions": "TC=25°C, repetitive, pulse width limited by max. junction temperature",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulsed",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "L=0.5mH, RG=25Ω, IAS=20A, VGS=10V, starting TJ=25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum power dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 45,
          "conditions": "TC=25°C",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Storage and operating temperature range",
          "symbol": "TSTG, TJ",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction to case",
          "symbol": "RJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 1.8,
          "max": null,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction to ambient",
          "symbol": "RJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 62,
          "max": null,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        }
      ]
    }
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  "discovery_pitch": "ASDM30N120Q-R (ASDsemi) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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