component
ASDM30N120Q-R
Public Made by Adomby adom
ASDsemi MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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asdm30n120q-r: specified limits as data (metadata.characteristics, 18 rows from the datasheet)
2 files changed
+249−1
README.md+25@@ -27,6 +27,31 @@ ASDM30N120Q-R from ASDsemi, in a DFN5x6-8. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 9 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source breakdown voltage | V(BR)DSS | 30 | | | V | VGS=0V ID=250μA | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS=24V,VGS=0V | 2 |+| Zero gate voltage drain current (high temperature) | IDSS | | | 30 | μA | VDS=24V,VGS=0V, Tj=85°C | 2 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |+| Gate threshold voltage | VGS(TH) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |+| Drain-source on-state resistance (VGS=10V) | RDS(ON) | | 2.1 | 3.5 | mΩ | VGS=10V, ID=30A | 2 |+| Drain-source on-state resistance (VGS=4.5V) | RDS(ON) | | 3.6 | 4.5 | mΩ | VGS=4.5V, ID=30A | 2 |+| Forward on voltage | VSD | | 0.79 | 1.2 | V | ISD=20A,VGS=0V | 2 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous drain current | ID | | | 120 | A | VGS=10V, TC=25°C | 1 |+| Continuous drain current | ID | | | 80 | A | VGS=10V, TC=100°C | 1 |+| Diode continuous forward current | IS | | | 120 | A | TC=25°C | 1 |+| Pulse drain current | IDM | | | 480 | A | TC=25°C, repetitive, pulse width limited by max. junction temperature | 1 |+| Avalanche energy, single pulsed | EAS | | | 100 | mJ | L=0.5mH, RG=25Ω, IAS=20A, VGS=10V, starting TJ=25°C | 1 |+| Maximum power dissipation | PD | | | 45 | W | TC=25°C | 1 |+| Storage and operating temperature range | TSTG, TJ | -55 | | 150 | °C | | 1 |+| Thermal resistance, junction to case | RJC | | 1.8 | | °C/W | | 1 |+| Thermal resistance, junction to ambient | RJA | | 62 | | °C/W | | 1 |+ ## CAD (KiCad official) - Symbol: `ASDM30N120Q-R`
page.json+224−1@@ -185,6 +185,229 @@ "Package": "DFN5x6-8", "Category": "Transistors/Thyristors", "Pins": "9"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e8a3ff68c653447a",+ "rows": [+ {+ "name": "Drain-Source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=24V,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (high temperature)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "VDS=24V,VGS=0V, Tj=85°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V,VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.5,+ "max": 2,+ "conditions": "VDS=VGS,ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (VGS=10V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 2.1,+ "max": 3.5,+ "conditions": "VGS=10V, ID=30A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source on-state resistance (VGS=4.5V)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 3.6,+ "max": 4.5,+ "conditions": "VGS=4.5V, ID=30A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.79,+ "max": 1.2,+ "conditions": "ISD=20A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "VGS=10V, TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "VGS=10V, TC=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Diode continuous forward current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulse drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 480,+ "conditions": "TC=25°C, repetitive, pulse width limited by max. junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulsed",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "L=0.5mH, RG=25Ω, IAS=20A, VGS=10V, starting TJ=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage and operating temperature range",+ "symbol": "TSTG, TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to case",+ "symbol": "RJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 1.8,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction to ambient",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 62,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -226,4 +449,4 @@ "visibility": { "public": true }-}+}