# ASDM30N120Q-R

**ASDsemi** · MOSFETs · DFN5x6-8

ASDM30N120Q-R from ASDsemi, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source); pin 1 is marked by the dot; drain-source breakdown 30 V, diode continuous forward current 120 A at TC=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source), tied with pins 1 and 3; continuous drain current 120 A at TC=25°C and 80 A at TC=100°C. |
| 3 | S | passive | Source of the N-channel MOSFET (pins 1-3 are source), tied with pins 1 and 2; pulsed drain current 480 A at TC=25°C. |
| 4 | G | input | Gate of the MOSFET; gate-source voltage limit ±20 V, threshold 1.0 to 2 V at ID=250μA. |
| 5 | D | passive | Drain of the MOSFET (pins 5-8 are drain); VDS rating 30 V, RDS(on) typ 2.1 mΩ at VGS=10 V. |
| 6 | D | passive | Drain of the MOSFET (pins 5-8 are drain), tied with pins 5, 7 and 8; VDS rating 30 V. |
| 7 | D | passive | Drain of the MOSFET (pins 5-8 are drain), tied with pins 5, 6 and 8; VDS rating 30 V. |
| 8 | D | passive | Drain of the MOSFET (pins 5-8 are drain), tied with pins 5, 6 and 7; VDS rating 30 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source breakdown voltage | V(BR)DSS | 30 |  |  | V | VGS=0V ID=250μA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS=24V,VGS=0V | 2 |
| Zero gate voltage drain current (high temperature) | IDSS |  |  | 30 | μA | VDS=24V,VGS=0V, Tj=85°C | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Gate threshold voltage | VGS(TH) | 1 | 1.5 | 2 | V | VDS=VGS,ID=250μA | 2 |
| Drain-source on-state resistance (VGS=10V) | RDS(ON) |  | 2.1 | 3.5 | mΩ | VGS=10V, ID=30A | 2 |
| Drain-source on-state resistance (VGS=4.5V) | RDS(ON) |  | 3.6 | 4.5 | mΩ | VGS=4.5V, ID=30A | 2 |
| Forward on voltage | VSD |  | 0.79 | 1.2 | V | ISD=20A,VGS=0V | 2 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous drain current | ID |  |  | 120 | A | VGS=10V, TC=25°C | 1 |
| Continuous drain current | ID |  |  | 80 | A | VGS=10V, TC=100°C | 1 |
| Diode continuous forward current | IS |  |  | 120 | A | TC=25°C | 1 |
| Pulse drain current | IDM |  |  | 480 | A | TC=25°C, repetitive, pulse width limited by max. junction temperature | 1 |
| Avalanche energy, single pulsed | EAS |  |  | 100 | mJ | L=0.5mH, RG=25Ω, IAS=20A, VGS=10V, starting TJ=25°C | 1 |
| Maximum power dissipation | PD |  |  | 45 | W | TC=25°C | 1 |
| Storage and operating temperature range | TSTG, TJ | -55 |  | 150 | °C |  | 1 |
| Thermal resistance, junction to case | RJC |  | 1.8 |  | °C/W |  | 1 |
| Thermal resistance, junction to ambient | RJA |  | 62 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `ASDM30N120Q-R`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `asdm30n120q-r-etched.step` / `asdm30n120q-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asdm30n120q-r.step` / `asdm30n120q-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ASDsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590225332294230016) (7 pp, sha256 `e8a3ff68c653447a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/asdm30n120q-r-datasheet.pdf)