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Ray asdm20p13s-r: specified limits as data (metadata.characteristics, 27 rows from the datasheet) c9d601c 19d ago

ASDM20P13S-R

ASDsemi · MOSFETs · SOP-8

ASDM20P13S-R from ASDsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source of the P-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate of the P-channel MOSFET; VGS rated ±12 V with threshold of -0.3 to -1.0 V.
5 D passive Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 6, 7 and 8.
6 D passive Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer ASDsemi
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -20 V VGS =0V, ID =-250uA 2
Gate Threshold Voltage VGS(TH) -0.3 -0.6 -1 V VGS =VDS, ID =-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-20V, VGS =0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS =0V 2
Static Drain-source On-Resistance RDS(ON) 6 13 mΩ VGS=-10V, ID=-8A 2
Static Drain-source On-Resistance RDS(ON) 7.7 16 mΩ VGS=-4.5V, ID=-6A 2
Forward Transconductance gFS 9 s VDS =-10V, ID=-5A 2
Source-drain voltage VSD 1.28 V Is=-9A 2
Input capacitance Ciss 2160 pF f = 1MHz 2
Output capacitance Coss 432 pF 2
Reverse transfer capacitance Crss 288 pF 2
Total gate charge Qg 15 nC VDD =25V, ID = 8A, VGS = 10V 2
Gate - Source charge Qgs 4 nC 2
Gate - Drain charge Qgd 6 nC 2
Drain-Source Voltage VDS -20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID -13 A TC=25℃ 1
Continuous Drain Current ID -8.36 A TC=75℃ 1
Continuous Drain Current ID -6.93 A TC=100℃ 1
Pulsed Drain Current IDM -52 A 1
Total Power Dissipation PD 3.6 W TC=25℃ 1
Total Power Dissipation PD 0.69 W TA=25℃ 1
Operating Junction Temperature TJ -55 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Single Pulse Avalanche Energy EAS 80 mJ 1
Thermal resistance, junction - case RthJC 24 °C/W 1
Thermal resistance, junction - ambient RthJA 85 °C/W 1

CAD (KiCad official)

  • Symbol: ASDM20P13S-R
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: asdm20p13s-r-etched.step / asdm20p13s-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asdm20p13s-r.step / asdm20p13s-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ASDsemi datasheet (7 pp, sha256 d117d93bcb65a2c0, retrieved 2026-10-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF