component
ASDM20P13S-R
Public Made by Adomby adom
ASDsemi MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
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| docs | 25d ago |
| viewers | 25d ago |
| asdm20p13s-r-etched.glb | 25d ago |
| asdm20p13s-r-etched.step | 25d ago |
| asdm20p13s-r-hero.glb | 25d ago |
| asdm20p13s-r-hero.overlay.json | 25d ago |
| asdm20p13s-r.glb | 25d ago |
| asdm20p13s-r.kicad_mod | 25d ago |
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| asdm20p13s-r.lbr | 25d ago |
| asdm20p13s-r.step | 25d ago |
| package.json | 25d ago |
| page.json | 19d ago |
| README.md | 19d ago |
ASDM20P13S-R
ASDsemi · MOSFETs · SOP-8
ASDM20P13S-R from ASDsemi, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, tied internally with pins 2 and 3. |
| 2 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, tied internally with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±12 V with threshold of -0.3 to -1.0 V. |
| 5 | D | passive | Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 6, 7 and 8. |
| 6 | D | passive | Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET (VDS -20 V max), tied internally with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ASDsemi |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS =0V, ID =-250uA | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -0.3 | -0.6 | -1 | V | VGS =VDS, ID =-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-20V, VGS =0V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V, VDS =0V | 2 | |
| Static Drain-source On-Resistance | RDS(ON) | 6 | 13 | mΩ | VGS=-10V, ID=-8A | 2 | |
| Static Drain-source On-Resistance | RDS(ON) | 7.7 | 16 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Forward Transconductance | gFS | 9 | s | VDS =-10V, ID=-5A | 2 | ||
| Source-drain voltage | VSD | 1.28 | V | Is=-9A | 2 | ||
| Input capacitance | Ciss | 2160 | pF | f = 1MHz | 2 | ||
| Output capacitance | Coss | 432 | pF | 2 | |||
| Reverse transfer capacitance | Crss | 288 | pF | 2 | |||
| Total gate charge | Qg | 15 | nC | VDD =25V, ID = 8A, VGS = 10V | 2 | ||
| Gate - Source charge | Qgs | 4 | nC | 2 | |||
| Gate - Drain charge | Qgd | 6 | nC | 2 | |||
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -13 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -8.36 | A | TC=75℃ | 1 | ||
| Continuous Drain Current | ID | -6.93 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -52 | A | 1 | |||
| Total Power Dissipation | PD | 3.6 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD | 0.69 | W | TA=25℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | TSTG | -55 | 150 | ℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 80 | mJ | 1 | |||
| Thermal resistance, junction - case | RthJC | 24 | °C/W | 1 | |||
| Thermal resistance, junction - ambient | RthJA | 85 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
ASDM20P13S-R - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
asdm20p13s-r-etched.step/asdm20p13s-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm20p13s-r.step/asdm20p13s-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ASDsemi datasheet (7 pp, sha256
d117d93bcb65a2c0, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).