# AOD468

**Alpha Omega Semicon** · MOSFETs · TO-252

AOD468 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±30 V (absolute maximum). |
| 2 | D | passive | Drain terminal; rated for VDS of 300 V and continuous drain current ID of 11.5 A at TC=25°C. |
| 3 | S | passive | Source terminal; maximum body-diode continuous current IS is 12 A and pulsed body-diode current ISM is 29 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 300 | V |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 11.5 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | 8.3 | A | TC=100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 29 | A |  | 1 |
| Avalanche Current | IAR |  |  | 3.8 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 216 | mJ |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 430 | mJ | L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns |  | 1 |
| Power Dissipation | PD |  |  | 150 | W | TC=25°C | 1 |
| Derate above 25°C |  |  |  | 1 | W/°C |  | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -50 |  | 175 | °C |  | 1 |
| Maximum Lead Temperature for Soldering | TL |  |  | 300 | °C | 1/8" from case for 5 seconds | 1 |
| Maximum Junction-to-Ambient | RθJA |  |  | 55 | °C/W |  | 1 |
| Maximum Junction-to-Case | RθJC |  | 0.7 | 1 | °C/W |  | 1 |
| Maximum Case-to-Sink | RθCS |  | 0.5 |  | °C/W |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 300 |  |  | V | ID=250µA, VGS=0V, TJ=25°C | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 350 |  |  | V | ID=250µA, VGS=0V, TJ=150°C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 | 10 | µA | VDS=300V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±30V | 2 |
| Gate Threshold Voltage | VGS(th) | 3.4 | 4 | 4.5 | V | VDS=5V ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 0.31 | 0.42 | Ω | VGS=10V, ID=6A | 2 |
| Diode Forward Voltage | VSD |  | 0.74 | 1 | V | IS=1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | 12 | A |  | 2 |
| Maximum Body-Diode Pulsed Current | ISM |  |  | 29 | A |  | 2 |
| Input Capacitance | Ciss | 500 | 632 | 790 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | 55 | 90 | 125 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 3 | 7 | 11 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate Resistance | Rg | 1.3 | 2.7 | 4.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 10 | 12.8 | 16 | nC | VGS=10V, VDS=240V, ID=12A | 2 |
| Body Diode Reverse Recovery Time | trr | 130 | 170 | 205 | ns | IF=12A, dI/dt=100A/µs, VDS=100V | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 1 | 1.3 | 1.6 | µC | IF=12A, dI/dt=100A/µs, VDS=100V | 2 |
| Forward Transconductance | gFS |  | 11 |  | S | VDS=40V, ID=6A | 2 |
| Temperature Coefficient of Breakdown Voltage | BVDSS/ΔTJ |  | 0.29 |  | V/°C |  | 2 |
| Gate Source Charge | Qgs |  | 4.4 |  | nC | VGS=10V, VDS=240V, ID=12A | 2 |
| Gate Drain Charge | Qgd |  | 4.3 |  | nC | VGS=10V, VDS=240V, ID=12A | 2 |
| Turn-On Delay Time | tD(on) |  | 18 |  | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 |
| Turn-On Rise Time | tr |  | 31 |  | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 36 |  | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 |
| Turn-Off Fall Time | tf |  | 20 |  | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 |

## CAD (KiCad official)

- Symbol: `AOD468`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `aod468-etched.step` / `aod468-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `aod468.step` / `aod468.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904677307637760) (6 pp, sha256 `f0ec392fe9e0cfb8`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/aod468-datasheet.pdf)