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AOD468

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Alpha Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs aod468: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
viewers aod468: viewers · Ray 24d ago
aod468-etched.glb aod468: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
aod468-etched.step aod468: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
aod468-hero.glb aod468: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
aod468-hero.overlay.json aod468: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
aod468.glb Publish 0.1.0 · Ray 24d ago
aod468.kicad_mod Publish 0.1.0 · Ray 24d ago
aod468.kicad_sym Publish 0.1.0 · Ray 24d ago
aod468.lbr Publish 0.1.0 · Ray 24d ago
aod468.step Publish 0.1.0 · Ray 24d ago
package.json aod468: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
page.json aod468: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STEP) · Ray 17d ago
README.md aod468: specified limits as data (metadata.characteristics, 40 rows from the datasheet) · Ray 19d ago

AOD468

Alpha Omega Semicon · MOSFETs · TO-252

AOD468 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±30 V (absolute maximum).
2 D passive Drain terminal; rated for VDS of 300 V and continuous drain current ID of 11.5 A at TC=25°C.
3 S passive Source terminal; maximum body-diode continuous current IS is 12 A and pulsed body-diode current ISM is 29 A.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 300 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 11.5 A TC=25°C 1
Continuous Drain Current ID 8.3 A TC=100°C 1
Pulsed Drain Current IDM 29 A 1
Avalanche Current IAR 3.8 A 1
Repetitive Avalanche Energy EAR 216 mJ 1
Single Pulsed Avalanche Energy EAS 430 mJ L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Power Dissipation PD 150 W TC=25°C 1
Derate above 25°C 1 W/°C 1
Junction and Storage Temperature Range TJ, TSTG -50 175 °C 1
Maximum Lead Temperature for Soldering TL 300 °C 1/8" from case for 5 seconds 1
Maximum Junction-to-Ambient RθJA 55 °C/W 1
Maximum Junction-to-Case RθJC 0.7 1 °C/W 1
Maximum Case-to-Sink RθCS 0.5 °C/W 1
Drain-Source Breakdown Voltage BVDSS 300 V ID=250µA, VGS=0V, TJ=25°C 2
Drain-Source Breakdown Voltage BVDSS 350 V ID=250µA, VGS=0V, TJ=150°C 2
Zero Gate Voltage Drain Current IDSS 1 10 µA VDS=300V, VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±30V 2
Gate Threshold Voltage VGS(th) 3.4 4 4.5 V VDS=5V ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 0.31 0.42 Ω VGS=10V, ID=6A 2
Diode Forward Voltage VSD 0.74 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 12 A 2
Maximum Body-Diode Pulsed Current ISM 29 A 2
Input Capacitance Ciss 500 632 790 pF VGS=0V, VDS=25V, f=1MHz 2
Output Capacitance Coss 55 90 125 pF VGS=0V, VDS=25V, f=1MHz 2
Reverse Transfer Capacitance Crss 3 7 11 pF VGS=0V, VDS=25V, f=1MHz 2
Gate Resistance Rg 1.3 2.7 4.1 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge Qg 10 12.8 16 nC VGS=10V, VDS=240V, ID=12A 2
Body Diode Reverse Recovery Time trr 130 170 205 ns IF=12A, dI/dt=100A/µs, VDS=100V 2
Body Diode Reverse Recovery Charge Qrr 1 1.3 1.6 µC IF=12A, dI/dt=100A/µs, VDS=100V 2
Forward Transconductance gFS 11 S VDS=40V, ID=6A 2
Temperature Coefficient of Breakdown Voltage BVDSS/ΔTJ 0.29 V/°C 2
Gate Source Charge Qgs 4.4 nC VGS=10V, VDS=240V, ID=12A 2
Gate Drain Charge Qgd 4.3 nC VGS=10V, VDS=240V, ID=12A 2
Turn-On Delay Time tD(on) 18 ns VGS=10V, VDS=150V, ID=12A, RG=25Ω 2
Turn-On Rise Time tr 31 ns VGS=10V, VDS=150V, ID=12A, RG=25Ω 2
Turn-Off Delay Time tD(off) 36 ns VGS=10V, VDS=150V, ID=12A, RG=25Ω 2
Turn-Off Fall Time tf 20 ns VGS=10V, VDS=150V, ID=12A, RG=25Ω 2

CAD (KiCad official)

  • Symbol: AOD468
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod468-etched.step / aod468-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod468.step / aod468.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256 f0ec392fe9e0cfb8, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF