component
AOD468
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAOD468
Alpha Omega Semicon · MOSFETs · TO-252
AOD468 from Alpha Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±30 V (absolute maximum). |
| 2 | D | passive | Drain terminal; rated for VDS of 300 V and continuous drain current ID of 11.5 A at TC=25°C. |
| 3 | S | passive | Source terminal; maximum body-diode continuous current IS is 12 A and pulsed body-diode current ISM is 29 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 300 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 11.5 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 8.3 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 29 | A | 1 | |||
| Avalanche Current | IAR | 3.8 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 216 | mJ | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 430 | mJ | L=60mH, IAS=3.8A, VDD=150V, RG=10Ω, Starting TJ=25°C | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 150 | W | TC=25°C | 1 | ||
| Derate above 25°C | 1 | W/°C | 1 | ||||
| Junction and Storage Temperature Range | TJ, TSTG | -50 | 175 | °C | 1 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 55 | °C/W | 1 | |||
| Maximum Junction-to-Case | RθJC | 0.7 | 1 | °C/W | 1 | ||
| Maximum Case-to-Sink | RθCS | 0.5 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 300 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 350 | V | ID=250µA, VGS=0V, TJ=150°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | 10 | µA | VDS=300V, VGS=0V | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3.4 | 4 | 4.5 | V | VDS=5V ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 0.31 | 0.42 | Ω | VGS=10V, ID=6A | 2 | |
| Diode Forward Voltage | VSD | 0.74 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 12 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 29 | A | 2 | |||
| Input Capacitance | Ciss | 500 | 632 | 790 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | 55 | 90 | 125 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 3 | 7 | 11 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate Resistance | Rg | 1.3 | 2.7 | 4.1 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 10 | 12.8 | 16 | nC | VGS=10V, VDS=240V, ID=12A | 2 |
| Body Diode Reverse Recovery Time | trr | 130 | 170 | 205 | ns | IF=12A, dI/dt=100A/µs, VDS=100V | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 1 | 1.3 | 1.6 | µC | IF=12A, dI/dt=100A/µs, VDS=100V | 2 |
| Forward Transconductance | gFS | 11 | S | VDS=40V, ID=6A | 2 | ||
| Temperature Coefficient of Breakdown Voltage | BVDSS/ΔTJ | 0.29 | V/°C | 2 | |||
| Gate Source Charge | Qgs | 4.4 | nC | VGS=10V, VDS=240V, ID=12A | 2 | ||
| Gate Drain Charge | Qgd | 4.3 | nC | VGS=10V, VDS=240V, ID=12A | 2 | ||
| Turn-On Delay Time | tD(on) | 18 | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 | ||
| Turn-On Rise Time | tr | 31 | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 36 | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 | ||
| Turn-Off Fall Time | tf | 20 | ns | VGS=10V, VDS=150V, ID=12A, RG=25Ω | 2 |
CAD (KiCad official)
- Symbol:
AOD468 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod468-etched.step/aod468-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod468.step/aod468.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
f0ec392fe9e0cfb8, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).