# AO4411

**Alpha Omega Semicon** · MOSFETs · SOIC-8

AO4411 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package. |
| 4 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -8 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | -6.6 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | -40 | A |  | 1 |
| Power Dissipation | PD |  |  | 3 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 2.1 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| BVDSS Drain-Source Breakdown Voltage | BVDSS | -30 |  |  | V | ID=-250µA, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS |  |  | -1 | µA | VDS=-24V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS |  |  | -5 | µA | VDS=-24V, VGS=0V, TJ=55°C | 2 |
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -2 | -2.4 | V | VDS=VGS, ID=-250µA | 2 |
| On State Drain Current | ID(ON) | -40 |  |  | A | VGS=-10V, VDS=-5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 24.5 | 32 | mΩ | VGS=-10V, ID=-8A | 2 |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) |  | 33 |  | mΩ | VGS=-10V, ID=-8A, TJ=125°C | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 41 | 55 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Forward Transconductance | gFS |  | 14.5 |  | S | VDS=-5V, ID=-8A | 2 |
| Diode Forward Voltage | VSD |  | -0.76 | -1 | V | IS=-1A, VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -4.2 | A |  | 2 |
| Input Capacitance | Ciss |  | 920 | 1120 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 190 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 122 |  | pF | VGS=0V, VDS=-15V, f=1MHz | 2 |
| Gate Resistance | Rg |  | 3.6 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge (10V) | Qg(10V) |  | 18.4 | 23 | nC | VGS=-10V, VDS=-15V, ID=-8A | 2 |
| Total Gate Charge (4.5V) | Qg(4.5V) |  | 9.3 | 11.5 | nC |  | 2 |
| Gate Source Charge | Qgs |  | 2.7 |  | nC |  | 2 |
| Gate Drain Charge | Qgd |  | 4.9 |  | nC |  | 2 |
| Turn-On Delay Time | tD(on) |  | 7.1 |  | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 3.4 |  | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 |
| Turn-Off Delay Time | tD(off) |  | 18.9 |  | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 8.4 |  | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Time | trr |  | 21.5 | 27 | ns | IF=-8A, dI/dt=100A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 12.5 |  | nC | IF=-8A, dI/dt=100A/µs | 2 |
| Junction-to-Ambient Thermal Resistance (t ≤ 10s) | RθJA |  | 24 | 40 | °C/W | t ≤ 10s | 1 |
| Junction-to-Ambient Thermal Resistance (Steady-State) | RθJA |  | 54 | 75 | °C/W | Steady-State | 1 |
| Junction-to-Lead Thermal Resistance (Steady-State) | RθJL |  | 21 | 30 | °C/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `AO4411`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `ao4411-etched.step` / `ao4411-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao4411.step` / `ao4411.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586171774425423872) (4 pp, sha256 `71f9036faccfeaee`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao4411-datasheet.pdf)