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AO4411
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO4411
Alpha Omega Semicon · MOSFETs · SOIC-8
AO4411 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package. |
| 4 | G | input | Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOIC-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -8 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | -6.6 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | -40 | A | 1 | |||
| Power Dissipation | PD | 3 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 2.1 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| BVDSS Drain-Source Breakdown Voltage | BVDSS | -30 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=25°C) | IDSS | -1 | µA | VDS=-24V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current (TJ=55°C) | IDSS | -5 | µA | VDS=-24V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -2 | -2.4 | V | VDS=VGS, ID=-250µA | 2 |
| On State Drain Current | ID(ON) | -40 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 24.5 | 32 | mΩ | VGS=-10V, ID=-8A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 33 | mΩ | VGS=-10V, ID=-8A, TJ=125°C | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 41 | 55 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Forward Transconductance | gFS | 14.5 | S | VDS=-5V, ID=-8A | 2 | ||
| Diode Forward Voltage | VSD | -0.76 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -4.2 | A | 2 | |||
| Input Capacitance | Ciss | 920 | 1120 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | |
| Output Capacitance | Coss | 190 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 122 | pF | VGS=0V, VDS=-15V, f=1MHz | 2 | ||
| Gate Resistance | Rg | 3.6 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg(10V) | 18.4 | 23 | nC | VGS=-10V, VDS=-15V, ID=-8A | 2 | |
| Total Gate Charge (4.5V) | Qg(4.5V) | 9.3 | 11.5 | nC | 2 | ||
| Gate Source Charge | Qgs | 2.7 | nC | 2 | |||
| Gate Drain Charge | Qgd | 4.9 | nC | 2 | |||
| Turn-On Delay Time | tD(on) | 7.1 | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 3.4 | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 18.9 | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 8.4 | ns | VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Time | trr | 21.5 | 27 | ns | IF=-8A, dI/dt=100A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 12.5 | nC | IF=-8A, dI/dt=100A/µs | 2 | ||
| Junction-to-Ambient Thermal Resistance (t ≤ 10s) | RθJA | 24 | 40 | °C/W | t ≤ 10s | 1 | |
| Junction-to-Ambient Thermal Resistance (Steady-State) | RθJA | 54 | 75 | °C/W | Steady-State | 1 | |
| Junction-to-Lead Thermal Resistance (Steady-State) | RθJL | 21 | 30 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AO4411 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
ao4411-etched.step/ao4411-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao4411.step/ao4411.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256
71f9036faccfeaee, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).