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AO4411

Public Made by Adom

by adom

Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 25d ago
viewers ao4411: viewers · Ray 25d ago
ao4411-etched.glb ao4411: factory component page (tier=lcsc) · Ray 25d ago
ao4411-etched.step ao4411: factory component page (tier=lcsc) · Ray 25d ago
ao4411-hero.glb ao4411: hero GLB from the etched model (keeps the MPN mark) · Ray 25d ago
ao4411-hero.overlay.json Publish 0.1.0 · Ray 25d ago
ao4411.glb Publish 0.1.0 · Ray 25d ago
ao4411.kicad_mod Publish 0.1.0 · Ray 25d ago
ao4411.kicad_sym Publish 0.1.0 · Ray 25d ago
ao4411.lbr Publish 0.1.0 · Ray 25d ago
ao4411.step Publish 0.1.0 · Ray 25d ago
package.json Publish 0.1.0 · Ray 25d ago
page.json ao4411: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 20d ago
README.md ao4411: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray 20d ago

AO4411

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4411 from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package.
2 S passive Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package.
3 S passive Source of the P-channel MOSFET, one of three source pins (1-3) on the SOIC-8 package.
4 G input Gate of the P-channel MOSFET, with a maximum gate-source voltage of ±20 V.
5 D passive Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V.
6 D passive Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V.
7 D passive Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V.
8 D passive Drain of the P-channel MOSFET, one of four drain pins (5-8), rated for VDS of -30 V.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -8 A TA=25°C 1
Continuous Drain Current ID -6.6 A TA=70°C 1
Pulsed Drain Current IDM -40 A 1
Power Dissipation PD 3 W TA=25°C 1
Power Dissipation PD 2.1 W TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
BVDSS Drain-Source Breakdown Voltage BVDSS -30 V ID=-250µA, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=25°C) IDSS -1 µA VDS=-24V, VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55°C) IDSS -5 µA VDS=-24V, VGS=0V, TJ=55°C 2
Gate-Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) -1.2 -2 -2.4 V VDS=VGS, ID=-250µA 2
On State Drain Current ID(ON) -40 A VGS=-10V, VDS=-5V 2
Static Drain-Source On-Resistance RDS(ON) 24.5 32 mΩ VGS=-10V, ID=-8A 2
Static Drain-Source On-Resistance (TJ=125°C) RDS(ON) 33 mΩ VGS=-10V, ID=-8A, TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 41 55 mΩ VGS=-4.5V, ID=-5A 2
Forward Transconductance gFS 14.5 S VDS=-5V, ID=-8A 2
Diode Forward Voltage VSD -0.76 -1 V IS=-1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS -4.2 A 2
Input Capacitance Ciss 920 1120 pF VGS=0V, VDS=-15V, f=1MHz 2
Output Capacitance Coss 190 pF VGS=0V, VDS=-15V, f=1MHz 2
Reverse Transfer Capacitance Crss 122 pF VGS=0V, VDS=-15V, f=1MHz 2
Gate Resistance Rg 3.6 5 Ω VGS=0V, VDS=0V, f=1MHz 2
Total Gate Charge (10V) Qg(10V) 18.4 23 nC VGS=-10V, VDS=-15V, ID=-8A 2
Total Gate Charge (4.5V) Qg(4.5V) 9.3 11.5 nC 2
Gate Source Charge Qgs 2.7 nC 2
Gate Drain Charge Qgd 4.9 nC 2
Turn-On Delay Time tD(on) 7.1 ns VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 2
Turn-On Rise Time tr 3.4 ns VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 2
Turn-Off Delay Time tD(off) 18.9 ns VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 2
Turn-Off Fall Time tf 8.4 ns VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω 2
Body Diode Reverse Recovery Time trr 21.5 27 ns IF=-8A, dI/dt=100A/µs 2
Body Diode Reverse Recovery Charge Qrr 12.5 nC IF=-8A, dI/dt=100A/µs 2
Junction-to-Ambient Thermal Resistance (t ≤ 10s) RθJA 24 40 °C/W t ≤ 10s 1
Junction-to-Ambient Thermal Resistance (Steady-State) RθJA 54 75 °C/W Steady-State 1
Junction-to-Lead Thermal Resistance (Steady-State) RθJL 21 30 °C/W Steady-State 1

CAD (KiCad official)

  • Symbol: AO4411
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4411-etched.step / ao4411-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4411.step / ao4411.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (4 pp, sha256 71f9036faccfeaee, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF