AO4292E

{
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  "type": "component",
  "slug": "ao4292e",
  "title": "AO4292E",
  "brief": "Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "ao4292e",
    "factory-2.0.0",
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  "component": {
    "mpn": "AO4292E",
    "manufacturer": "Alpha Omega Semicon",
    "package": "SOIC-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879964955009024",
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      "lbr": "ao4292e.lbr"
    },
    "distributor_links": {
      "lcsc": "C176743",
      "digikey": "800-3741-2-ND"
    },
    "distributor_check": {
      "checked_at": "2026-10-09T18:24:33Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": "800-3741-2-ND",
        "status": "found",
        "lifecycle": "Active"
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    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, with body diode continuous current rated 4 A."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied in parallel with the other source pins."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied in parallel with the other source pins."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate with ESD protection (HBM Class 2); VGS maximum is ±20 V and RDS(ON) is specified at 10 V and 4.5 V drive."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, rated 100 V VDS and 8 A continuous at TA=25°C."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied in parallel with the other drain pins."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied in parallel with the other drain pins."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, tied in parallel with the other drain pins."
      }
    ],
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        "guard_notes": [
          "extractor flagged: The package drawing on page 1 labels the pins (S, S, S, G on one side and D, D, D, D on the other) b",
          "vision extraction: provenance cannot be text-verified; needs consensus"
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        "cost_usd": 0.1573,
        "at": "2026-10-09T18:22:11"
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        "sha256": "207c4ae5d8f17d60",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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  "metadata": {
    "specs": {
      "Manufacturer": "Alpha Omega Semicon",
      "Package": "SOIC-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "",
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        },
        {
          "name": "Gate-Source Voltage",
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        {
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        {
          "name": "Continuous Drain Current",
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          "kind": "absolute_maximum",
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          "typ": null,
          "max": 8,
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        },
        {
          "name": "Continuous Drain Current",
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          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 6.2,
          "conditions": "TA=70°C",
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        {
          "name": "Pulsed Drain Current",
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          "conditions": "L=0.1mH",
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        {
          "name": "Power Dissipation",
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          "unit": "W",
          "min": null,
          "typ": null,
          "max": 3.1,
          "conditions": "t ≤ 10s, TA=25°C",
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        {
          "name": "Power Dissipation",
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        {
          "name": "Junction and Storage Temperature Range",
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        {
          "name": "Maximum Junction-to-Ambient (steady-state)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
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        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
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        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
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        {
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          "kind": "electrical",
          "unit": "µA",
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          "typ": null,
          "max": 5,
          "conditions": "VDS=100V, VGS=0V, TJ=55°C",
          "source_page": 2,
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        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -10,
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          "conditions": "VDS=0V, VGS=±20V",
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          "name": "Gate Threshold Voltage",
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        {
          "name": "Static Drain-Source On-Resistance",
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          "max": 23,
          "conditions": "VGS=10V, ID=8A",
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          "source": "datasheet"
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        {
          "name": "Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 33,
          "max": 42,
          "conditions": "TJ=125°C",
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          "source": "datasheet"
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        {
          "name": "Static Drain-Source On-Resistance",
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          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 23.5,
          "max": 33,
          "conditions": "VGS=4.5V, ID=6A",
          "source_page": 2,
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        {
          "name": "Diode Forward Voltage",
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          "max": 1,
          "conditions": "IS=1A, VGS=0V",
          "source_page": 2,
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        },
        {
          "name": "Maximum Body-Diode Continuous Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4,
          "conditions": "",
          "source_page": 2,
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        {
          "name": "Gate resistance",
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          "kind": "electrical",
          "unit": "Ω",
          "min": 0.5,
          "typ": 1,
          "max": 1.5,
          "conditions": "f=1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total Gate Charge",
          "symbol": "Qg (10V)",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 16.5,
          "max": 25,
          "conditions": "VGS=10V, VDS=50V, ID=8A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total Gate Charge",
          "symbol": "Qg (4.5V)",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 8,
          "max": 14,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
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    "name": "Ray",
    "email": "[email protected]"
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