component
AO4292E
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ao4292e: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+340−1
README.md+32@@ -26,6 +26,38 @@ AO4292E from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extra | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 100 | V | | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| VDS Spike | VSPIKE | | | 120 | V | 10µs | 1 |+| Continuous Drain Current | ID | | | 8 | A | TA=25°C | 1 |+| Continuous Drain Current | ID | | | 6.2 | A | TA=70°C | 1 |+| Pulsed Drain Current | IDM | | | 32 | A | | 1 |+| Avalanche Current | IAS | | | 14 | A | | 1 |+| Avalanche Energy | EAS | | | 10 | mJ | L=0.1mH | 1 |+| Power Dissipation | PD | | | 3.1 | W | t ≤ 10s, TA=25°C | 1 |+| Power Dissipation | PD | | | 2 | W | t ≤ 10s, TA=70°C | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (steady-state) | RθJA | | | 75 | °C/W | Steady-State | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 100 | | | V | ID=250µA, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=100V, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 5 | µA | VDS=100V, VGS=0V, TJ=55°C | 2 |+| Gate-Body Leakage Current | IGSS | -10 | | 10 | µA | VDS=0V, VGS=±20V | 2 |+| Gate Threshold Voltage | VGS(th) | 1.6 | 2.15 | 2.7 | V | VDS=VGS, ID=250µA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 18.5 | 23 | mΩ | VGS=10V, ID=8A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 33 | 42 | mΩ | TJ=125°C | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 23.5 | 33 | mΩ | VGS=4.5V, ID=6A | 2 |+| Diode Forward Voltage | VSD | | 0.72 | 1 | V | IS=1A, VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 4 | A | | 2 |+| Gate resistance | Rg | 0.5 | 1 | 1.5 | Ω | f=1MHz | 2 |+| Total Gate Charge | Qg (10V) | | 16.5 | 25 | nC | VGS=10V, VDS=50V, ID=8A | 2 |+| Total Gate Charge | Qg (4.5V) | | 8 | 14 | nC | | 2 |+ ## CAD (KiCad official) - Symbol: `AO4292E`
page.json+308−1@@ -180,6 +180,313 @@ "Package": "SOIC-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "207c4ae5d8f17d60",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "VDS Spike",+ "symbol": "VSPIKE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "10µs",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6.2,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 32,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 14,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "L=0.1mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "t ≤ 10s, TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "t ≤ 10s, TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (steady-state)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 75,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "ID=250µA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=100V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=100V, VGS=0V, TJ=55°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS=0V, VGS=±20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.6,+ "typ": 2.15,+ "max": 2.7,+ "conditions": "VDS=VGS, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18.5,+ "max": 23,+ "conditions": "VGS=10V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 33,+ "max": 42,+ "conditions": "TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 23.5,+ "max": 33,+ "conditions": "VGS=4.5V, ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.72,+ "max": 1,+ "conditions": "IS=1A, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": 0.5,+ "typ": 1,+ "max": 1.5,+ "conditions": "f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg (10V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 16.5,+ "max": 25,+ "conditions": "VGS=10V, VDS=50V, ID=8A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg (4.5V)",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 8,+ "max": 14,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -221,4 +528,4 @@ "visibility": { "public": true }-}+}