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AO4292E

Alpha Omega Semicon · MOSFETs · SOIC-8

AO4292E from Alpha Omega Semicon, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, with body diode continuous current rated 4 A.
2 S passive Source of the N-channel MOSFET, tied in parallel with the other source pins.
3 S passive Source of the N-channel MOSFET, tied in parallel with the other source pins.
4 G input Gate with ESD protection (HBM Class 2); VGS maximum is ±20 V and RDS(ON) is specified at 10 V and 4.5 V drive.
5 D passive Drain of the N-channel MOSFET, rated 100 V VDS and 8 A continuous at TA=25°C.
6 D passive Drain of the N-channel MOSFET, tied in parallel with the other drain pins.
7 D passive Drain of the N-channel MOSFET, tied in parallel with the other drain pins.
8 D passive Drain of the N-channel MOSFET, tied in parallel with the other drain pins.

Key specifications

Parameter Value
Manufacturer Alpha Omega Semicon
Package SOIC-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
VDS Spike VSPIKE 120 V 10µs 1
Continuous Drain Current ID 8 A TA=25°C 1
Continuous Drain Current ID 6.2 A TA=70°C 1
Pulsed Drain Current IDM 32 A 1
Avalanche Current IAS 14 A 1
Avalanche Energy EAS 10 mJ L=0.1mH 1
Power Dissipation PD 3.1 W t ≤ 10s, TA=25°C 1
Power Dissipation PD 2 W t ≤ 10s, TA=70°C 1
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Maximum Junction-to-Ambient (steady-state) RθJA 75 °C/W Steady-State 1
Drain-Source Breakdown Voltage BVDSS 100 V ID=250µA, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=100V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS=100V, VGS=0V, TJ=55°C 2
Gate-Body Leakage Current IGSS -10 10 µA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1.6 2.15 2.7 V VDS=VGS, ID=250µA 2
Static Drain-Source On-Resistance RDS(ON) 18.5 23 mΩ VGS=10V, ID=8A 2
Static Drain-Source On-Resistance RDS(ON) 33 42 mΩ TJ=125°C 2
Static Drain-Source On-Resistance RDS(ON) 23.5 33 mΩ VGS=4.5V, ID=6A 2
Diode Forward Voltage VSD 0.72 1 V IS=1A, VGS=0V 2
Maximum Body-Diode Continuous Current IS 4 A 2
Gate resistance Rg 0.5 1 1.5 Ω f=1MHz 2
Total Gate Charge Qg (10V) 16.5 25 nC VGS=10V, VDS=50V, ID=8A 2
Total Gate Charge Qg (4.5V) 8 14 nC 2

CAD (KiCad official)

  • Symbol: AO4292E
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ao4292e-etched.step / ao4292e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ao4292e.step / ao4292e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Alpha Omega Semicon datasheet (10 pp, sha256 207c4ae5d8f17d60, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF