# AO3422

**Alpha Omega Semicon** · MOSFETs · SOT-23

AO3422 from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V maximum, with threshold of 0.6 V min, 1.3 V typ, 2 V max at ID=250µA. |
| 2 | S | passive | Source; body-diode continuous current is 1 A maximum and continuous drain current is 2.1 A at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage is rated 55 V maximum, with pulsed drain current of 10 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 55 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | Printed as ±12 V | 1 |
| Continuous Drain Current | ID |  |  | 2.1 | A | TA=25°C | 1 |
| Continuous Drain Current | ID |  |  | 1.7 | A | TA=70°C | 1 |
| Pulsed Drain Current | IDM |  |  | 10 | A | Repetitive rating, pulse width limited by junction temperature (Note B) | 1 |
| Power Dissipation | PD |  |  | 1.25 | W | TA=25°C | 1 |
| Power Dissipation | PD |  |  | 0.8 | W | TA=70°C | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA |  | 75 | 100 | °C/W | t ≤ 10s (Note A) | 1 |
| Maximum Junction-to-Ambient (Steady-State) | RθJA |  | 115 | 150 | °C/W | Steady-State (Note A) | 1 |
| Maximum Junction-to-Lead (Steady-State) | RθJL |  | 48 | 60 | °C/W | Steady-State | 1 |
| Gate drive range | VGS | 2.5 |  | 12 | V | Wide gate drive range, stated in General Description | 1 |
| Drain-Source Breakdown Voltage | BVDSS | 55 |  |  | V | ID=10mA, VGS=0V | 2 |
| Gate-Source leakage current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.6 | 1.3 | 2 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 10 |  |  | A | VGS=4.5V, VDS=5V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 125 | 160 | mΩ | VGS=4.5V, ID=2.1A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 157 | 200 | mΩ | VGS=2.5V, ID=1.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 175 | 210 | mΩ | TJ=125°C | 2 |
| Diode Forward Voltage | VSD |  | 0.78 | 1 | V | IS=1A | 2 |
| Input Capacitance | Ciss |  | 214 | 300 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate resistance | Rg |  | 1.3 | 3 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg |  | 2.6 | 3.3 | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 20 | 30 | ns | IF=2.1A, dI/dt=100A/µs | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 |  | µA | VDS=44V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 5 |  | µA | VDS=44V, VGS=0V, TJ=55°C | 2 |
| Forward Transconductance | gFS |  | 11 |  | S | VDS=5V, ID=2.1A | 2 |
| Maximum Body-Diode Continuous Current | IS |  | 1 |  | A |  | 2 |
| Output Capacitance | Coss |  | 31 |  | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 12.6 |  | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate Source Charge | Qgs |  | 0.6 |  | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 |
| Gate Drain Charge | Qgd |  | 0.8 |  | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 |
| Turn-On DelayTime | tD(on) |  | 2.3 |  | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |
| Turn-On Rise Time | tr |  | 2.4 |  | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |
| Turn-Off DelayTime | tD(off) |  | 16.5 |  | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |
| Turn-Off Fall Time | tf |  | 2 |  | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 17 |  | nC | IF=2.1A, dI/dt=100A/µs | 2 |

## CAD (KiCad official)

- Symbol: `AO3422`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `ao3422-etched.step` / `ao3422-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ao3422.step` / `ao3422.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Alpha Omega Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586177051330564097) (5 pp, sha256 `97f6e0f0f9a2d172`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ao3422-datasheet.pdf)