component
AO3422
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
ao3422: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
2 files changed
+496−1
README.md+44@@ -21,6 +21,50 @@ AO3422 from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extrac | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 55 | V | | 1 |+| Gate-Source Voltage | VGS | -12 | | 12 | V | Printed as ±12 V | 1 |+| Continuous Drain Current | ID | | | 2.1 | A | TA=25°C | 1 |+| Continuous Drain Current | ID | | | 1.7 | A | TA=70°C | 1 |+| Pulsed Drain Current | IDM | | | 10 | A | Repetitive rating, pulse width limited by junction temperature (Note B) | 1 |+| Power Dissipation | PD | | | 1.25 | W | TA=25°C | 1 |+| Power Dissipation | PD | | | 0.8 | W | TA=70°C | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | | 75 | 100 | °C/W | t ≤ 10s (Note A) | 1 |+| Maximum Junction-to-Ambient (Steady-State) | RθJA | | 115 | 150 | °C/W | Steady-State (Note A) | 1 |+| Maximum Junction-to-Lead (Steady-State) | RθJL | | 48 | 60 | °C/W | Steady-State | 1 |+| Gate drive range | VGS | 2.5 | | 12 | V | Wide gate drive range, stated in General Description | 1 |+| Drain-Source Breakdown Voltage | BVDSS | 55 | | | V | ID=10mA, VGS=0V | 2 |+| Gate-Source leakage current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±12V | 2 |+| Gate Threshold Voltage | VGS(th) | 0.6 | 1.3 | 2 | V | VDS=VGS, ID=250µA | 2 |+| On state drain current | ID(ON) | 10 | | | A | VGS=4.5V, VDS=5V | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 125 | 160 | mΩ | VGS=4.5V, ID=2.1A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 157 | 200 | mΩ | VGS=2.5V, ID=1.5A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 175 | 210 | mΩ | TJ=125°C | 2 |+| Diode Forward Voltage | VSD | | 0.78 | 1 | V | IS=1A | 2 |+| Input Capacitance | Ciss | | 214 | 300 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |+| Gate resistance | Rg | | 1.3 | 3 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |+| Total Gate Charge | Qg | | 2.6 | 3.3 | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 |+| Body Diode Reverse Recovery Time | trr | | 20 | 30 | ns | IF=2.1A, dI/dt=100A/µs | 2 |+| Zero Gate Voltage Drain Current | IDSS | | 1 | | µA | VDS=44V, VGS=0V | 2 |+| Zero Gate Voltage Drain Current | IDSS | | 5 | | µA | VDS=44V, VGS=0V, TJ=55°C | 2 |+| Forward Transconductance | gFS | | 11 | | S | VDS=5V, ID=2.1A | 2 |+| Maximum Body-Diode Continuous Current | IS | | 1 | | A | | 2 |+| Output Capacitance | Coss | | 31 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |+| Reverse Transfer Capacitance | Crss | | 12.6 | | pF | VGS=0V, VDS=25V, f=1MHz | 2 |+| Gate Source Charge | Qgs | | 0.6 | | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 |+| Gate Drain Charge | Qgd | | 0.8 | | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 |+| Turn-On DelayTime | tD(on) | | 2.3 | | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |+| Turn-On Rise Time | tr | | 2.4 | | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |+| Turn-Off DelayTime | tD(off) | | 16.5 | | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |+| Turn-Off Fall Time | tf | | 2 | | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 |+| Body Diode Reverse Recovery Charge | Qrr | | 17 | | nC | IF=2.1A, dI/dt=100A/µs | 2 |+ ## CAD (KiCad official) - Symbol: `AO3422`
page.json+452−1@@ -150,6 +150,457 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "97f6e0f0f9a2d172",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 55,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -12,+ "typ": null,+ "max": 12,+ "conditions": "Printed as ±12 V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.1,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.7,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "Repetitive rating, pulse width limited by junction temperature (Note B)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1.25,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.8,+ "conditions": "TA=70°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (t ≤ 10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 75,+ "max": 100,+ "conditions": "t ≤ 10s (Note A)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Ambient (Steady-State)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 115,+ "max": 150,+ "conditions": "Steady-State (Note A)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Junction-to-Lead (Steady-State)",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 48,+ "max": 60,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate drive range",+ "symbol": "VGS",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 2.5,+ "typ": null,+ "max": 12,+ "conditions": "Wide gate drive range, stated in General Description",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 55,+ "typ": null,+ "max": null,+ "conditions": "ID=10mA, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0V, VGS=±12V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 0.6,+ "typ": 1.3,+ "max": 2,+ "conditions": "VDS=VGS, ID=250µA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On state drain current",+ "symbol": "ID(ON)",+ "kind": "electrical",+ "unit": "A",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VGS=4.5V, VDS=5V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 125,+ "max": 160,+ "conditions": "VGS=4.5V, ID=2.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 157,+ "max": 200,+ "conditions": "VGS=2.5V, ID=1.5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 175,+ "max": 210,+ "conditions": "TJ=125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.78,+ "max": 1,+ "conditions": "IS=1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 214,+ "max": 300,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.3,+ "max": 3,+ "conditions": "VGS=0V, VDS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.6,+ "max": 3.3,+ "conditions": "VGS=4.5V, VDS=27.5V, ID=2.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 20,+ "max": 30,+ "conditions": "IF=2.1A, dI/dt=100A/µs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "VDS=44V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "VDS=44V, VGS=0V, TJ=55°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VDS=5V, ID=2.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 31,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 12.6,+ "max": null,+ "conditions": "VGS=0V, VDS=25V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.6,+ "max": null,+ "conditions": "VGS=4.5V, VDS=27.5V, ID=2.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.8,+ "max": null,+ "conditions": "VGS=4.5V, VDS=27.5V, ID=2.1A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On DelayTime",+ "symbol": "tD(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 2.3,+ "max": null,+ "conditions": "VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off DelayTime",+ "symbol": "tD(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 16.5,+ "max": null,+ "conditions": "VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 2,+ "max": null,+ "conditions": "VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Body Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "IF=2.1A, dI/dt=100A/µs",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +642,4 @@ "visibility": { "public": true }-}+}