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AO3422
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAO3422
Alpha Omega Semicon · MOSFETs · SOT-23
AO3422 from Alpha Omega Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±12 V maximum, with threshold of 0.6 V min, 1.3 V typ, 2 V max at ID=250µA. |
| 2 | S | passive | Source; body-diode continuous current is 1 A maximum and continuous drain current is 2.1 A at TA=25°C. |
| 3 | D | passive | Drain; drain-source voltage is rated 55 V maximum, with pulsed drain current of 10 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 55 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | Printed as ±12 V | 1 | |
| Continuous Drain Current | ID | 2.1 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 1.7 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 10 | A | Repetitive rating, pulse width limited by junction temperature (Note B) | 1 | ||
| Power Dissipation | PD | 1.25 | W | TA=25°C | 1 | ||
| Power Dissipation | PD | 0.8 | W | TA=70°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 10s) | RθJA | 75 | 100 | °C/W | t ≤ 10s (Note A) | 1 | |
| Maximum Junction-to-Ambient (Steady-State) | RθJA | 115 | 150 | °C/W | Steady-State (Note A) | 1 | |
| Maximum Junction-to-Lead (Steady-State) | RθJL | 48 | 60 | °C/W | Steady-State | 1 | |
| Gate drive range | VGS | 2.5 | 12 | V | Wide gate drive range, stated in General Description | 1 | |
| Drain-Source Breakdown Voltage | BVDSS | 55 | V | ID=10mA, VGS=0V | 2 | ||
| Gate-Source leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.6 | 1.3 | 2 | V | VDS=VGS, ID=250µA | 2 |
| On state drain current | ID(ON) | 10 | A | VGS=4.5V, VDS=5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 125 | 160 | mΩ | VGS=4.5V, ID=2.1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 157 | 200 | mΩ | VGS=2.5V, ID=1.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 175 | 210 | mΩ | TJ=125°C | 2 | |
| Diode Forward Voltage | VSD | 0.78 | 1 | V | IS=1A | 2 | |
| Input Capacitance | Ciss | 214 | 300 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | |
| Gate resistance | Rg | 1.3 | 3 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge | Qg | 2.6 | 3.3 | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 | |
| Body Diode Reverse Recovery Time | trr | 20 | 30 | ns | IF=2.1A, dI/dt=100A/µs | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=44V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | µA | VDS=44V, VGS=0V, TJ=55°C | 2 | ||
| Forward Transconductance | gFS | 11 | S | VDS=5V, ID=2.1A | 2 | ||
| Maximum Body-Diode Continuous Current | IS | 1 | A | 2 | |||
| Output Capacitance | Coss | 31 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 12.6 | pF | VGS=0V, VDS=25V, f=1MHz | 2 | ||
| Gate Source Charge | Qgs | 0.6 | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 | ||
| Gate Drain Charge | Qgd | 0.8 | nC | VGS=4.5V, VDS=27.5V, ID=2.1A | 2 | ||
| Turn-On DelayTime | tD(on) | 2.3 | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 | ||
| Turn-On Rise Time | tr | 2.4 | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 | ||
| Turn-Off DelayTime | tD(off) | 16.5 | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 | ||
| Turn-Off Fall Time | tf | 2 | ns | VGS=10V, VDS=27.5V, RL=12Ω, RGEN=3Ω | 2 | ||
| Body Diode Reverse Recovery Charge | Qrr | 17 | nC | IF=2.1A, dI/dt=100A/µs | 2 |
CAD (KiCad official)
- Symbol:
AO3422 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
ao3422-etched.step/ao3422-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ao3422.step/ao3422.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (5 pp, sha256
97f6e0f0f9a2d172, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).