component
A4910KJPTR-T
Public Made by Adomby adom
Allegro MicroSystems, LLC Motor Driver ICs, LQFP-48-EP(7x7). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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A4910KJPTR-T
Allegro MicroSystems, LLC · Motor Driver ICs · LQFP-48-EP(7x7)
A4910KJPTR-T from Allegro MicroSystems, LLC, in a LQFP-48-EP(7x7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SA | passive | Motor connection for phase A, sensing the switched load voltage and connected to the negative side of the bootstrap capacitor (abs max VCx - 16 V to VCx + 0.3 V). |
| 2 | CA | passive | Bootstrap capacitor connection for phase A and positive supply for the high-side gate driver (abs max -0.3 V to VREG + 50 V). |
| 3 | VREG | power_out | Gate drive supply output, regulated nominally 13 V, requiring a storage capacitor to supply low-side drivers and bootstrap charging (abs max -0.3 to 16 V). |
| 4 | CP2 | passive | Charge pump capacitor terminal; connect a minimum 220 nF, typically 470 nF, capacitor between CP1 and CP2. |
| 5 | CP1 | passive | Charge pump capacitor terminal; connect a minimum 220 nF, typically 470 nF, capacitor between CP1 and CP2 (abs max -0.3 to 16 V). |
| 6 | PGND | power_in | Digital and power ground, to be connected to supply ground and AGND. |
| 7 | VBB | power_in | Main power supply for internal regulators and charge pump, operating 7 to 50 V (functional down to 5.5 V), connected through reverse voltage protection and decoupled. |
| 8 | VBRG | input | Sense input to the top of the external MOSFET bridge for measuring the drain voltage of the high-side MOSFETs (abs max -5 to 55 V). |
| 9 | AGND | power_in | Analog reference ground, quiet return for measurement and input references, connected to PGND. |
| 10 | VDD | power_in | Logic supply of 3 to 5.5 V, decoupled with a 100 nF capacitor (abs max -0.3 to 6 V). |
| 11 | COASTn | input | Active-low input that forces all gate drive outputs low, turning off all external MOSFETs and overriding all other gate control inputs and registers. |
| 12 | RESETn | input | Standby mode control: pulsing low resets faults and holding low longer than tRSD forces sleep mode; can be pulled to VBB with a 20 to 33 kΩ resistor. |
| 13 | STRn | input | Serial strobe (chip select) input; when high, SCK and SDI activity is ignored and SDO is high impedance. |
| 14 | SCK | input | Serial clock input; data is latched from SDI on the rising edge, with 16 rising edges per write, and SCK must be held high when STRn changes. |
| 15 | SDI | input | Serial data input, 16-bit word, MSB first. |
| 16 | SDO | tri_state | Serial data output, high impedance when STRn is high, outputting the fault flag as soon as STRn goes low (abs max -0.3 to VDD + 0.3 V). |
| 17 | DIAG | output | Programmable diagnostic output selecting fault flag (default), temperature, clock, or VDS threshold. |
| 18 | AHI | input | Control input for high side of phase A, logically ORed with the Run register bit to control GHA. |
| 19 | ALO | input | Control input for low side of phase A, logically ORed with the Run register bit to control GLA. |
| 20 | BHI | input | Control input for high side of phase B, logically ORed with the Run register bit to control GHB. |
| 21 | BLO | input | Control input for low side of phase B, logically ORed with the Run register bit to control GLB. |
| 22 | CHI | input | Control input for high side of phase C, logically ORed with the Run register bit to control GHC. |
| 23 | CLO | input | Control input for low side of phase C, logically ORed with the Run register bit to control GLC. |
| 24 | OPAP | input | Uncommitted operational amplifier non-inverting input (abs max -0.3 to 6.5 V). |
| 25 | OPAM | input | Uncommitted operational amplifier inverting input (abs max -0.3 to 6.5 V). |
| 26 | OPAO | output | Uncommitted operational amplifier output (abs max -0.3 to VDD + 0.3 V). |
| 27 | CSCP | input | Phase C current-sense amplifier positive input (abs max -4 to 6.5 V). |
| 28 | CSCM | input | Phase C current-sense amplifier negative input (abs max -4 to 6.5 V). |
| 29 | CSCO | output | Phase C current-sense amplifier output (abs max -0.3 to VDD + 0.3 V). |
| 30 | CSBP | input | Phase B current-sense amplifier positive input (abs max -4 to 6.5 V). |
| 31 | CSBM | input | Phase B current-sense amplifier negative input (abs max -4 to 6.5 V). |
| 32 | CSBO | output | Phase B current-sense amplifier output (abs max -0.3 to VDD + 0.3 V). |
| 33 | CSAP | input | Phase A current-sense amplifier positive input (abs max -4 to 6.5 V). |
| 34 | CSAM | input | Phase A current-sense amplifier negative input (abs max -4 to 6.5 V). |
| 35 | CSAO | output | Phase A current-sense amplifier output (abs max -0.3 to VDD + 0.3 V). |
| 36 | LSSC | passive | Low-side source return for phase C gate discharge, connected to the low-side MOSFET source through a low-impedance track (abs max VREG - 16 to 18 V). |
| 37 | GLC | output | Low-side gate drive output for phase C external N-channel MOSFET (abs max VREG - 16 to 18 V). |
| 38 | GHC | output | High-side gate drive output for phase C external N-channel MOSFET (abs max VCx - 16 to VCx + 0.3 V). |
| 39 | SC | passive | Motor connection for phase C, sensing the switched load voltage and connected to the negative side of the bootstrap capacitor. |
| 40 | CC | passive | Bootstrap capacitor connection for phase C and positive supply for the high-side gate driver (abs max -0.3 to VREG + 50 V). |
| 41 | LSSB | passive | Low-side source return for phase B gate discharge, connected to the low-side MOSFET source through a low-impedance track (abs max VREG - 16 to 18 V). |
| 42 | GLB | output | Low-side gate drive output for phase B external N-channel MOSFET (abs max VREG - 16 to 18 V). |
| 43 | GHB | output | High-side gate drive output for phase B external N-channel MOSFET (abs max VCx - 16 to VCx + 0.3 V). |
| 44 | SB | passive | Motor connection for phase B, sensing the switched load voltage and connected to the negative side of the bootstrap capacitor. |
| 45 | CB | passive | Bootstrap capacitor connection for phase B and positive supply for the high-side gate driver (abs max -0.3 to VREG + 50 V). |
| 46 | LSSA | passive | Low-side source return for phase A gate discharge, connected to the low-side MOSFET source through a low-impedance track (abs max VREG - 16 to 18 V). |
| 47 | GLA | output | Low-side gate drive output for phase A external N-channel MOSFET (abs max VREG - 16 to 18 V). |
| 48 | GHA | output | High-side gate drive output for phase A external N-channel MOSFET (abs max VCx - 16 to VCx + 0.3 V). |
| 49 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Allegro MicroSystems, LLC |
| Package | LQFP-48-EP(7x7) |
| Category | Power Management ICs |
| Pins | 49 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Load Supply Voltage | VBB | -0.3 | 50 | V | 2 | ||
| Logic Supply Voltage | VDD | -0.3 | 6 | V | 2 | ||
| Terminal VREG | VREG | -0.3 | 16 | V | 2 | ||
| Terminal CP1 | VCP1 | -0.3 | 16 | V | 2 | ||
| Logic Inputs | -0.3 | 6 | V | STRn, SDI, SCK, RESETn, COASTn, xHI, xLO terminals | 2 | ||
| Sense Amplifier Inputs | -4 | 6.5 | V | CSAP, CSAM, CSBP, CSBM, CSCP, CSCM terminals | 2 | ||
| Operational Amplifier Inputs | -0.3 | 6.5 | V | OPAP and OPAM terminals | 2 | ||
| Terminal VBRG | VBRG | -5 | 55 | V | 2 | ||
| Ambient Operating Temperature Range | TA | -40 | 150 | °C | Limited by power dissipation | 2 | |
| Maximum Junction Temperature | TJ(max) | 150 | °C | Continuous | 2 | ||
| Maximum Junction Temperature, overtemperature event | TJ(max) | 175 | °C | Overtemperature event not exceeding 10 seconds, lifetime duration not exceeding 10 hours | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Package Thermal Resistance (Junction to Ambient) | RθJA | 23 | °C/W | On 4-layer PCB based on JEDEC standard | 3 | ||
| Package Thermal Resistance (Junction to Ambient) | RθJA | 44 | °C/W | On 2-layer PCB with 3 in.2 of copper area each side | 3 | ||
| Package Thermal Resistance (Junction to Pad) | RθJP | 2 | °C/W | 3 | |||
| VBB Functional Operating Range | VBB | 5.5 | 50 | V | 6 | ||
| VBB Quiescent Current | IBBQ | 10 | 14 | mA | RESETn = high, outputs low, VBB = 12 V | 6 | |
| VBB Quiescent Current, sleep | IBBS | 10 | µA | RESETn = low, sleep mode, VBB = 12 V | 6 | ||
| VDD Logic Supply | VDD | 3 | 5.5 | V | 6 | ||
| VDD Quiescent Current | IDDQ | 10 | 13 | mA | RESETn = high, outputs low | 6 | |
| VDD Quiescent Current, sleep | IDDS | 10 | µA | RESETn = low, sleep mode | 6 | ||
| VREG Output Voltage | VREG | 9 | 13 | 13.8 | V | VBB > 9 V, IREG = 0 to 30 mA | 6 |
| VREG Output Voltage | VREG | 7.9 | V | 6 V < VBB ≤ 7.5 V, IREG = 0 to 15 mA | 6 | ||
| VREG Output Voltage | VREG | 7.9 | 9.5 | V | 5.5 V < VBB ≤ 6 V, IREG < 9 mA | 6 | |
| Bootstrap Diode Forward Voltage | VfBOOT | 0.4 | 0.7 | 1 | V | ID = 10 mA | 6 |
| Bootstrap Diode Forward Voltage | VfBOOT | 1.5 | 2.2 | 2.8 | V | ID = 100 mA | 6 |
| Bootstrap Diode Resistance | rD | 6 | 11 | 22 | Ω | rD(100 mA) = (VfBOOT(150 mA), VfBOOT(50mA))/ 100 mA | 6 |
| Bootstrap Diode Current Limit | IDBOOT | 250 | 500 | 750 | mA | 6 | |
| High-Side Gate Drive Static Load Resistance | RGSH | 250 | kΩ | 6 | |||
| System Clock Period | tOSC | 45 | 50 | 55 | ns | 6 | |
| Pull-Up On-Resistance | RDS(on)UP | 5 | 8 | 11 | Ω | TJ = 25°C, IGHx = -150 mA | 6 |
| Pull-Up On-Resistance | RDS(on)UP | 10 | 15 | 20 | Ω | TJ = 150°C, IGHx = -150 mA | 6 |
| Pull-Down On-Resistance | RDS(on)DN | 1.7 | 2.5 | 3.1 | Ω | TJ = 25°C, IGLx = 150 mA | 6 |
| Pull-Down On-Resistance | RDS(on)DN | 2.9 | 4 | 5 | Ω | TJ = 150°C, IGLx = 150 mA | 6 |
| Turn-Off Propagation Delay | tP(off) | 60 | 90 | 140 | ns | Input change to unloaded gate output change (see figure 5) | 7 |
| Turn-On Propagation Delay | tP(on) | 50 | 80 | 130 | ns | Input change to unloaded gate output change (see figure 5) | 7 |
| Propagation Delay Matching (Phase-to-Phase) | ∆tPP | 5 | 15 | ns | Same phase change, DT[6..0] = 0 | 7 | |
| Propagation Delay Matching (On-to-Off) | ∆tOO | 15 | 30 | ns | Single phase, DT[6..0] = 0 | 7 | |
| Propagation Delay Matching (GHx-to-GLx) | ∆tHL | 20 | ns | Rising to rising edges, falling to falling edges, DT[6..0] = 0 | 7 | ||
| Input Hysteresis | VIhys | 200 | 350 | mV | RESETn pin | 7 | |
| Input Hysteresis | VIhys | 250 | 500 | mV | All other logic pins | 7 | |
| Input Pull-Up Resistor | RPU | 30 | 50 | 70 | kΩ | STRn | 7 |
| Input Pull-Down Resistor | RPD | 30 | 50 | 70 | kΩ | COASTn, RESETn, SCK, SDI, AHI, ALO, BHI, BLO, CHI, and CLO pins | 7 |
| Output Low Voltage | VOL | 0.2 | 0.4 | V | IOL= 1 mA | 7 | |
| Output Leakage (SDO pin) | ISDOlkg | -1 | 1 | µA | 0 V < VSDO < VDD, STRn = 1 | 7 | |
| Reset Pulse Width | tRST | 0.2 | 4.5 | µs | 7 | ||
| Input Offset Voltage (current sense amplifier) | VIOS(SA) | -10 | 10 | mV | 8 | ||
| VREG Undervoltage Lockout, rising | VREGON | 7.6 | 7.95 | 8.2 | V | VREG rising | 10 |
| VREG Undervoltage Lockout, falling | VREGOFF | 6.9 | 7.18 | 7.4 | V | VREG falling | 10 |
| Bootstrap Undervoltage | VBOOTUV | 60 | 74 | %VREG | Cx with respect to Sx | 10 | |
| VDD Undervoltage Turn Off | VDDUV | 2.45 | 2.7 | 2.85 | V | VDD falling | 10 |
| Fault Blanking Time | tBL | 2.8 | 3.2 | 3.6 | µs | Default power-up state | 10 |
| VBRG Input Voltage | VBRG | 5.5 | 50 | V | 10 | ||
| Hot Temperature Warning Threshold | TJWH | 125 | 135 | 145 | °C | Temperature increasing | 10 |
| Overtemperature Flag | TJF | 155 | 170 | °C | Temperature increasing | 10 | |
| VDS Threshold | VDSTH | 800 | mV | Default power-up level | 10 | ||
| Turn-On Time | tr | 190 | ns | CLOAD = 10 nF, 20% to 80% points | 6 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | with exposed thermal pad (suffix JP). It is lead (Pb) free, with 100% matte-tin leadframe plating. | 2 |
CAD (KiCad official)
- Symbol:
A4910KJPTR-T - Footprint:
Package_QFP:LQFP-48-1EP_7x7mm_P0.5mm_EP3.6x3.6mm - 3D model: LQFP-48-EP(7x7) (KiCad packages3D, STEP)
- 3D model files:
a4910kjptr-t-etched.step/a4910kjptr-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);a4910kjptr-t.step/a4910kjptr-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Allegro MicroSystems, LLC datasheet (36 pp, sha256
696bf2e310245234, retrieved 2026-10-30, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).