2V7002KT1G

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  "title": "2V7002KT1G",
  "brief": "onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "2V7002KT1G",
    "manufacturer": "onsemi",
    "package": "SOT-23",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "lcsc": "C415857",
      "digikey": "2V7002KT1GOSTR-ND",
      "mouser": "863-2V7002KT1G"
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    "pins": [
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        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V (VGS), and the gate-source ESD rating is 2000 V (HBM)."
      },
      {
        "number": "2",
        "name": "Source",
        "type": "passive",
        "description": "Source terminal of the MOSFET; source (body diode) current is rated 300 mA maximum (IS)."
      },
      {
        "number": "3",
        "name": "Drain",
        "type": "passive",
        "description": "Drain terminal of the MOSFET; drain-to-source voltage is rated 60 V (VDSS) with drain current up to 380 mA (1 sq in pad, TA = 25°C)."
      }
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          "extractor flagged: Pin types for Source and Drain (passive) and Gate (input) are assigned from standard MOSFET terminal; The datasheet covers 2N7002K and 2V7002K in the same SOT-23 package. The 2V7002KT1G ordering entry l"
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      "Manufacturer": "onsemi",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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          "name": "Drain-to-Source Voltage",
          "symbol": "VDSS",
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          "typ": null,
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          "name": "Gate-to-Source Voltage",
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          "min": -20,
          "typ": null,
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        {
          "name": "Drain Current",
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          "name": "Drain Current",
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          "name": "Drain Current",
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          "name": "Drain Current",
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          "name": "Power Dissipation",
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          "unit": "mW",
          "min": null,
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        {
          "name": "Pulsed Drain Current",
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          "name": "Operating Junction and Storage Temperature Range",
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          "unit": "°C",
          "min": -55,
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        {
          "name": "Source Current (Body Diode)",
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          "unit": "mA",
          "min": null,
          "typ": null,
          "max": 300,
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        {
          "name": "Lead Temperature for Soldering Purposes",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "1/8 in from case for 10 s",
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        {
          "name": "Gate-Source ESD Rating",
          "symbol": "ESD",
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          "typ": null,
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          "conditions": "HBM, Method 3015",
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        {
          "name": "Junction-to-Ambient Thermal Resistance, Steady State (1 sq in pad)",
          "symbol": "RJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
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          "conditions": "Surface-mounted on FR4, 1 sq in pad, 1 oz Cu, steady state",
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        {
          "name": "Junction-to-Ambient Thermal Resistance, t ≤ 5 s (1 sq in pad)",
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        {
          "name": "Junction-to-Ambient Thermal Resistance, Steady State (minimum pad)",
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          "name": "Junction-to-Ambient Thermal Resistance, t ≤ 5 s (minimum pad)",
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        {
          "name": "Drain-to-Source Breakdown Voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
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        {
          "name": "Zero Gate Voltage Drain Current",
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          "conditions": "VGS = 0 V, VDS = 60 V, TJ = 25°C",
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        {
          "name": "Zero Gate Voltage Drain Current",
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          "conditions": "VGS = 0 V, VDS = 60 V, TJ = 125°C",
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        {
          "name": "Zero Gate Voltage Drain Current",
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          "kind": "electrical",
          "unit": "nA",
          "min": null,
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          "conditions": "VGS = 0 V, VDS = 50 V, TJ = 25°C",
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        {
          "name": "Gate-to-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "A",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VDS = 0 V, VGS = ±20 V",
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        {
          "name": "Gate-to-Source Leakage Current",
          "symbol": "IGSS",
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        {
          "name": "Gate-to-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 150,
          "conditions": "VDS = 0 V, VGS = ±5.0 V",
          "source_page": 2,
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        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
          "min": 1,
          "typ": null,
          "max": 2.3,
          "conditions": "VGS = VDS, ID = 250 A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-to-Source On Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.19,
          "max": 1.6,
          "conditions": "VGS = 10 V, ID = 500 mA",
          "source_page": 2,
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        {
          "name": "Drain-to-Source On Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.33,
          "max": 2.5,
          "conditions": "VGS = 4.5 V, ID = 200 mA",
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        {
          "name": "Input Capacitance",
          "symbol": "CISS",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 24.5,
          "max": 45,
          "conditions": "VGS = 0 V, f = 1 MHz, VDS = 20 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Output Capacitance",
          "symbol": "COSS",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 4.2,
          "max": 8,
          "conditions": "VGS = 0 V, f = 1 MHz, VDS = 20 V",
          "source_page": 2,
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        },
        {
          "name": "Reverse Transfer Capacitance",
          "symbol": "CRSS",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 2.2,
          "max": 5,
          "conditions": "VGS = 0 V, f = 1 MHz, VDS = 20 V",
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        {
          "name": "Forward Diode Voltage",
          "symbol": "VSD",
          "kind": "electrical",
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          "min": null,
          "typ": 0.8,
          "max": 1.2,
          "conditions": "VGS = 0 V, IS = 200 mA, TJ = 25°C",
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