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2V7002KT1G

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 16d ago
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2v7002kt1g-etched.glb 2v7002kt1g: factory component page (tier=lcsc) · Ray 16d ago
2v7002kt1g-etched.step 2v7002kt1g: factory component page (tier=lcsc) · Ray 16d ago
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package.json Publish 0.1.0 · Ray 16d ago
page.json 2v7002kt1g: specified limits as data (metadata.characteristics, 31 rows from the datasheet) · Ray 9d ago
README.md 2v7002kt1g: specified limits as data (metadata.characteristics, 31 rows from the datasheet) · Ray 9d ago

2V7002KT1G

onsemi · MOSFETs · SOT-23

2V7002KT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; gate-to-source voltage is rated ±20 V (VGS), and the gate-source ESD rating is 2000 V (HBM).
2 Source passive Source terminal of the MOSFET; source (body diode) current is rated 300 mA maximum (IS).
3 Drain passive Drain terminal of the MOSFET; drain-to-source voltage is rated 60 V (VDSS) with drain current up to 380 mA (1 sq in pad, TA = 25°C).

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 60 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Drain Current ID 380 mA Steady State 1 sq in Pad, TA = 25°C 1
Drain Current ID 270 mA Steady State 1 sq in Pad, TA = 85°C 1
Drain Current ID 320 mA Steady State Minimum Pad, TA = 25°C 1
Drain Current ID 230 mA Steady State Minimum Pad, TA = 85°C 1
Power Dissipation PD 420 mW Steady State 1 sq in Pad 1
Power Dissipation PD 300 mW Steady State Minimum Pad 1
Pulsed Drain Current IDM 5 A tp = 10 s 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Source Current (Body Diode) IS 300 mA 1
Lead Temperature for Soldering Purposes TL 260 °C 1/8 in from case for 10 s 1
Gate-Source ESD Rating ESD 2000 V HBM, Method 3015 1
Junction-to-Ambient Thermal Resistance, Steady State (1 sq in pad) RJA 300 °C/W Surface-mounted on FR4, 1 sq in pad, 1 oz Cu, steady state 2
Junction-to-Ambient Thermal Resistance, t ≤ 5 s (1 sq in pad) RJA 92 °C/W Surface-mounted on FR4, 1 sq in pad, 1 oz Cu, t ≤ 5 s 2
Junction-to-Ambient Thermal Resistance, Steady State (minimum pad) RJA 417 °C/W Surface-mounted on FR4, 0.08 sq in pad, 1 oz Cu, steady state 2
Junction-to-Ambient Thermal Resistance, t ≤ 5 s (minimum pad) RJA 154 °C/W Surface-mounted on FR4, 0.08 sq in pad, 1 oz Cu, t ≤ 5 s 2
Drain-to-Source Breakdown Voltage V(BR)DSS 60 V VGS = 0 V, ID = 250 A 2
Zero Gate Voltage Drain Current IDSS 1 A VGS = 0 V, VDS = 60 V, TJ = 25°C 2
Zero Gate Voltage Drain Current IDSS 10 A VGS = 0 V, VDS = 60 V, TJ = 125°C 2
Zero Gate Voltage Drain Current IDSS 100 nA VGS = 0 V, VDS = 50 V, TJ = 25°C 2
Gate-to-Source Leakage Current IGSS -10 10 A VDS = 0 V, VGS = ±20 V 2
Gate-to-Source Leakage Current IGSS 450 nA VDS = 0 V, VGS = ±10 V 2
Gate-to-Source Leakage Current IGSS 150 nA VDS = 0 V, VGS = ±5.0 V 2
Gate Threshold Voltage VGS(TH) 1 2.3 V VGS = VDS, ID = 250 A 2
Drain-to-Source On Resistance RDS(on) 1.19 1.6 Ω VGS = 10 V, ID = 500 mA 2
Drain-to-Source On Resistance RDS(on) 1.33 2.5 Ω VGS = 4.5 V, ID = 200 mA 2
Input Capacitance CISS 24.5 45 pF VGS = 0 V, f = 1 MHz, VDS = 20 V 2
Output Capacitance COSS 4.2 8 pF VGS = 0 V, f = 1 MHz, VDS = 20 V 2
Reverse Transfer Capacitance CRSS 2.2 5 pF VGS = 0 V, f = 1 MHz, VDS = 20 V 2
Forward Diode Voltage VSD 0.8 1.2 V VGS = 0 V, IS = 200 mA, TJ = 25°C 2

CAD (KiCad official)

  • Symbol: 2V7002KT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2v7002kt1g-etched.step / 2v7002kt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2v7002kt1g.step / 2v7002kt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 e6b15c13442601fc, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF