component
2V7002KT1G
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2v7002kt1g: specified limits as data (metadata.characteristics, 31 rows from the datasheet)
2 files changed
+418−1
README.md+38@@ -21,6 +21,44 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-to-Source Voltage | VDSS | | | 60 | V | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current | ID | | | 380 | mA | Steady State 1 sq in Pad, TA = 25°C | 1 |+| Drain Current | ID | | | 270 | mA | Steady State 1 sq in Pad, TA = 85°C | 1 |+| Drain Current | ID | | | 320 | mA | Steady State Minimum Pad, TA = 25°C | 1 |+| Drain Current | ID | | | 230 | mA | Steady State Minimum Pad, TA = 85°C | 1 |+| Power Dissipation | PD | | | 420 | mW | Steady State 1 sq in Pad | 1 |+| Power Dissipation | PD | | | 300 | mW | Steady State Minimum Pad | 1 |+| Pulsed Drain Current | IDM | | | 5 | A | tp = 10 s | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Source Current (Body Diode) | IS | | | 300 | mA | | 1 |+| Lead Temperature for Soldering Purposes | TL | | | 260 | °C | 1/8 in from case for 10 s | 1 |+| Gate-Source ESD Rating | ESD | | | 2000 | V | HBM, Method 3015 | 1 |+| Junction-to-Ambient Thermal Resistance, Steady State (1 sq in pad) | RJA | | | 300 | °C/W | Surface-mounted on FR4, 1 sq in pad, 1 oz Cu, steady state | 2 |+| Junction-to-Ambient Thermal Resistance, t ≤ 5 s (1 sq in pad) | RJA | | | 92 | °C/W | Surface-mounted on FR4, 1 sq in pad, 1 oz Cu, t ≤ 5 s | 2 |+| Junction-to-Ambient Thermal Resistance, Steady State (minimum pad) | RJA | | | 417 | °C/W | Surface-mounted on FR4, 0.08 sq in pad, 1 oz Cu, steady state | 2 |+| Junction-to-Ambient Thermal Resistance, t ≤ 5 s (minimum pad) | RJA | | | 154 | °C/W | Surface-mounted on FR4, 0.08 sq in pad, 1 oz Cu, t ≤ 5 s | 2 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0 V, ID = 250 A | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | A | VGS = 0 V, VDS = 60 V, TJ = 25°C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 10 | A | VGS = 0 V, VDS = 60 V, TJ = 125°C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 100 | nA | VGS = 0 V, VDS = 50 V, TJ = 25°C | 2 |+| Gate-to-Source Leakage Current | IGSS | -10 | | 10 | A | VDS = 0 V, VGS = ±20 V | 2 |+| Gate-to-Source Leakage Current | IGSS | | | 450 | nA | VDS = 0 V, VGS = ±10 V | 2 |+| Gate-to-Source Leakage Current | IGSS | | | 150 | nA | VDS = 0 V, VGS = ±5.0 V | 2 |+| Gate Threshold Voltage | VGS(TH) | 1 | | 2.3 | V | VGS = VDS, ID = 250 A | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 1.19 | 1.6 | Ω | VGS = 10 V, ID = 500 mA | 2 |+| Drain-to-Source On Resistance | RDS(on) | | 1.33 | 2.5 | Ω | VGS = 4.5 V, ID = 200 mA | 2 |+| Input Capacitance | CISS | | 24.5 | 45 | pF | VGS = 0 V, f = 1 MHz, VDS = 20 V | 2 |+| Output Capacitance | COSS | | 4.2 | 8 | pF | VGS = 0 V, f = 1 MHz, VDS = 20 V | 2 |+| Reverse Transfer Capacitance | CRSS | | 2.2 | 5 | pF | VGS = 0 V, f = 1 MHz, VDS = 20 V | 2 |+| Forward Diode Voltage | VSD | | 0.8 | 1.2 | V | VGS = 0 V, IS = 200 mA, TJ = 25°C | 2 |+ ## CAD (KiCad official) - Symbol: `2V7002KT1G`
page.json+380−1@@ -150,6 +150,385 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "e6b15c13442601fc",+ "rows": [+ {+ "name": "Drain-to-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 380,+ "conditions": "Steady State 1 sq in Pad, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 270,+ "conditions": "Steady State 1 sq in Pad, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Steady State Minimum Pad, TA = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 230,+ "conditions": "Steady State Minimum Pad, TA = 85°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 420,+ "conditions": "Steady State 1 sq in Pad",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Steady State Minimum Pad",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "tp = 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1/8 in from case for 10 s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source ESD Rating",+ "symbol": "ESD",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 2000,+ "conditions": "HBM, Method 3015",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, Steady State (1 sq in pad)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "Surface-mounted on FR4, 1 sq in pad, 1 oz Cu, steady state",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, t ≤ 5 s (1 sq in pad)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 92,+ "conditions": "Surface-mounted on FR4, 1 sq in pad, 1 oz Cu, t ≤ 5 s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, Steady State (minimum pad)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 417,+ "conditions": "Surface-mounted on FR4, 0.08 sq in pad, 1 oz Cu, steady state",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, t ≤ 5 s (minimum pad)",+ "symbol": "RJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 154,+ "conditions": "Surface-mounted on FR4, 0.08 sq in pad, 1 oz Cu, t ≤ 5 s",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 250 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 60 V, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VGS = 0 V, VDS = 60 V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0 V, VDS = 50 V, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "A",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 450,+ "conditions": "VDS = 0 V, VGS = ±10 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "VDS = 0 V, VGS = ±5.0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": null,+ "max": 2.3,+ "conditions": "VGS = VDS, ID = 250 A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.19,+ "max": 1.6,+ "conditions": "VGS = 10 V, ID = 500 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.33,+ "max": 2.5,+ "conditions": "VGS = 4.5 V, ID = 200 mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 24.5,+ "max": 45,+ "conditions": "VGS = 0 V, f = 1 MHz, VDS = 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "COSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4.2,+ "max": 8,+ "conditions": "VGS = 0 V, f = 1 MHz, VDS = 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "CRSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 2.2,+ "max": 5,+ "conditions": "VGS = 0 V, f = 1 MHz, VDS = 20 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Diode Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.8,+ "max": 1.2,+ "conditions": "VGS = 0 V, IS = 200 mA, TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +570,4 @@ "visibility": { "public": true }-}+}