# 1N65G-AA3-R

**UTC Unisonic Tech** · MOSFETs · SOT-223

1N65G-AA3-R from UTC Unisonic Tech, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 1.2 A, 650 V N-channel power MOSFET, with gate-source voltage rated ±30 V (VGSS). |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, with drain-source voltage rated 650 V (VDSS) and continuous drain current rated 1.2 A (ID). |
| 3 | S | passive | Source terminal of the N-channel power MOSFET, serving as the reference for the gate-source voltage rated ±30 V (VGSS). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 650 | V |  | 3 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 3 |
| Avalanche Current | IAR |  |  | 1.2 | A | Repetitive rating (Note 2) | 3 |
| Continuous Drain Current | ID |  |  | 1.2 | A |  | 3 |
| Pulsed Drain Current | IDM |  |  | 4.8 | A | Note 2 | 3 |
| Single Pulsed Avalanche Energy | EAS |  |  | 50 | mJ | Single pulsed (Note 3) | 3 |
| Repetitive Avalanche Energy | EAR |  |  | 4 | mJ | Repetitive (Note 2) | 3 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 4: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C | 3 |
| Power Dissipation (SOT-223) | PD |  |  | 8 | W | SOT-223 package | 3 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 3 |
| Operating Temperature | TOPR | -55 |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 3 |
| Drain-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250μA | 4 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | μA | VDS=650V, VGS=0V | 4 |
| Forward Gate-Source Leakage Current | IGSS |  |  | 100 | nA | VGS=30V, VDS=0V | 4 |
| Reverse Gate-Source Leakage Current | IGSS | -100 |  |  | nA | VGS=-30V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) |  | 9.5 | 12.5 | Ω | VGS=10V, ID=0.6A | 4 |
| Input Capacitance | CISS |  | 120 | 150 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Output Capacitance | COSS |  | 20 | 25 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Reverse Transfer Capacitance | CRSS |  | 3 | 4 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |
| Total Gate Charge | QG |  | 5 | 6 | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 |
| Turn-On Delay Time | tD(ON) |  | 5 | 20 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |
| Turn-On Rise Time | tR |  | 25 | 60 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |
| Turn-Off Delay Time | tD(OFF) |  | 7 | 25 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |
| Turn-Off Fall Time | tF |  | 25 | 60 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 1.2 | A |  | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 4.8 | A |  | 4 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS=0V, IS=1.2A | 4 |
| Total Gate Charge (Gate-Source) | QGS |  | 1 |  | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 |
| Gate-Drain Charge | QGD |  | 2.6 |  | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 |
| Reverse Recovery Time | trr |  | 160 |  | ns | VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1) | 4 |
| Reverse Recovery Charge | Qrr |  | 0.3 |  | μC | VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1) | 4 |
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.4 |  | V/°C | ID=250μA | 4 |
| Junction to Ambient (SOT-223) | θJA |  | 150 |  | °C/W | SOT-223 package | 3 |
| Junction to Case (SOT-223) | θJC |  | 14 |  | °C/W | SOT-223 package | 3 |

## CAD (KiCad official)

- Symbol: `1N65G-AA3-R`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files: `1n65g-aa3-r-etched.step` / `1n65g-aa3-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `1n65g-aa3-r.step` / `1n65g-aa3-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588910763549736960) (7 pp, sha256 `23d8dbd53ef62e8a`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/1n65g-aa3-r-datasheet.pdf)