component
1N65G-AA3-R
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UTC Unisonic Tech MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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1n65g-aa3-r: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+483−1
README.md+43@@ -21,6 +21,49 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | | | 650 | V | | 3 |+| Gate-Source Voltage | VGSS | -30 | | 30 | V | | 3 |+| Avalanche Current | IAR | | | 1.2 | A | Repetitive rating (Note 2) | 3 |+| Continuous Drain Current | ID | | | 1.2 | A | | 3 |+| Pulsed Drain Current | IDM | | | 4.8 | A | Note 2 | 3 |+| Single Pulsed Avalanche Energy | EAS | | | 50 | mJ | Single pulsed (Note 3) | 3 |+| Repetitive Avalanche Energy | EAR | | | 4 | mJ | Repetitive (Note 2) | 3 |+| Peak Diode Recovery dv/dt | dv/dt | | | 4.5 | V/ns | Note 4: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C | 3 |+| Power Dissipation (SOT-223) | PD | | | 8 | W | SOT-223 package | 3 |+| Junction Temperature | TJ | | | 150 | °C | | 3 |+| Operating Temperature | TOPR | -55 | | 150 | °C | | 3 |+| Storage Temperature | TSTG | -55 | | 150 | °C | | 3 |+| Drain-Source Breakdown Voltage | BVDSS | 650 | | | V | VGS=0V, ID=250μA | 4 |+| Drain-Source Leakage Current | IDSS | | | 10 | μA | VDS=650V, VGS=0V | 4 |+| Forward Gate-Source Leakage Current | IGSS | | | 100 | nA | VGS=30V, VDS=0V | 4 |+| Reverse Gate-Source Leakage Current | IGSS | -100 | | | nA | VGS=-30V, VDS=0V | 4 |+| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS=VGS, ID=250μA | 4 |+| Static Drain-Source On-State Resistance | RDS(ON) | | 9.5 | 12.5 | Ω | VGS=10V, ID=0.6A | 4 |+| Input Capacitance | CISS | | 120 | 150 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |+| Output Capacitance | COSS | | 20 | 25 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |+| Reverse Transfer Capacitance | CRSS | | 3 | 4 | pF | VDS=25V, VGS=0V, f=1MHz | 4 |+| Total Gate Charge | QG | | 5 | 6 | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 |+| Turn-On Delay Time | tD(ON) | | 5 | 20 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |+| Turn-On Rise Time | tR | | 25 | 60 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |+| Turn-Off Delay Time | tD(OFF) | | 7 | 25 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |+| Turn-Off Fall Time | tF | | 25 | 60 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 |+| Maximum Continuous Drain-Source Diode Forward Current | IS | | | 1.2 | A | | 4 |+| Maximum Pulsed Drain-Source Diode Forward Current | ISM | | | 4.8 | A | | 4 |+| Drain-Source Diode Forward Voltage | VSD | | | 1.4 | V | VGS=0V, IS=1.2A | 4 |+| Total Gate Charge (Gate-Source) | QGS | | 1 | | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 |+| Gate-Drain Charge | QGD | | 2.6 | | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 |+| Reverse Recovery Time | trr | | 160 | | ns | VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1) | 4 |+| Reverse Recovery Charge | Qrr | | 0.3 | | μC | VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1) | 4 |+| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.4 | | V/°C | ID=250μA | 4 |+| Junction to Ambient (SOT-223) | θJA | | 150 | | °C/W | SOT-223 package | 3 |+| Junction to Case (SOT-223) | θJC | | 14 | | °C/W | SOT-223 package | 3 |+ ## CAD (KiCad official) - Symbol: `1N65G-AA3-R`
page.json+440−1@@ -147,6 +147,445 @@ "Package": "SOT-223", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "23d8dbd53ef62e8a",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "Repetitive rating (Note 2)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.8,+ "conditions": "Note 2",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single Pulsed Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Single pulsed (Note 3)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Repetitive Avalanche Energy",+ "symbol": "EAR",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "Repetitive (Note 2)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery dv/dt",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "Note 4: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation (SOT-223)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 8,+ "conditions": "SOT-223 package",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating Temperature",+ "symbol": "TOPR",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250μA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS=650V, VGS=0V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS=30V, VDS=0V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": null,+ "conditions": "VGS=-30V, VDS=0V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(TH)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS=VGS, ID=250μA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 9.5,+ "max": 12.5,+ "conditions": "VGS=10V, ID=0.6A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 120,+ "max": 150,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "COSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 20,+ "max": 25,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "CRSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 3,+ "max": 4,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "QG",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5,+ "max": 6,+ "conditions": "VDS=520V, VGS=10V, ID=1.2A (Note 2,3)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "tD(ON)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 5,+ "max": 20,+ "conditions": "VDD=325V, ID=1.2A, RG=50Ω (Note 2,3)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tR",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 25,+ "max": 60,+ "conditions": "VDD=325V, ID=1.2A, RG=50Ω (Note 2,3)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "tD(OFF)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 7,+ "max": 25,+ "conditions": "VDD=325V, ID=1.2A, RG=50Ω (Note 2,3)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tF",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 25,+ "max": 60,+ "conditions": "VDD=325V, ID=1.2A, RG=50Ω (Note 2,3)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain-Source Diode Forward Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Maximum Pulsed Drain-Source Diode Forward Current",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.8,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.4,+ "conditions": "VGS=0V, IS=1.2A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (Gate-Source)",+ "symbol": "QGS",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=1.2A (Note 2,3)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "QGD",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.6,+ "max": null,+ "conditions": "VDS=520V, VGS=10V, ID=1.2A (Note 2,3)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 160,+ "max": null,+ "conditions": "VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "μC",+ "min": null,+ "typ": 0.3,+ "max": null,+ "conditions": "VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temperature Coefficient",+ "symbol": "ΔBVDSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/°C",+ "min": null,+ "typ": 0.4,+ "max": null,+ "conditions": "ID=250μA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction to Ambient (SOT-223)",+ "symbol": "θJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 150,+ "max": null,+ "conditions": "SOT-223 package",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Junction to Case (SOT-223)",+ "symbol": "θJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 14,+ "max": null,+ "conditions": "SOT-223 package",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +627,4 @@ "visibility": { "public": true }-}+}