component
1N65G-AA3-R
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| 1n65g-aa3-r-etched.step | 6d ago |
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1N65G-AA3-R
UTC Unisonic Tech · MOSFETs · SOT-223
1N65G-AA3-R from UTC Unisonic Tech, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the 1.2 A, 650 V N-channel power MOSFET, with gate-source voltage rated ±30 V (VGSS). |
| 2 | D | passive | Drain terminal of the N-channel power MOSFET, with drain-source voltage rated 650 V (VDSS) and continuous drain current rated 1.2 A (ID). |
| 3 | S | passive | Source terminal of the N-channel power MOSFET, serving as the reference for the gate-source voltage rated ±30 V (VGSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 650 | V | 3 | |||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 3 | ||
| Avalanche Current | IAR | 1.2 | A | Repetitive rating (Note 2) | 3 | ||
| Continuous Drain Current | ID | 1.2 | A | 3 | |||
| Pulsed Drain Current | IDM | 4.8 | A | Note 2 | 3 | ||
| Single Pulsed Avalanche Energy | EAS | 50 | mJ | Single pulsed (Note 3) | 3 | ||
| Repetitive Avalanche Energy | EAR | 4 | mJ | Repetitive (Note 2) | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 4: ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C | 3 | ||
| Power Dissipation (SOT-223) | PD | 8 | W | SOT-223 package | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operating Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS=650V, VGS=0V | 4 | ||
| Forward Gate-Source Leakage Current | IGSS | 100 | nA | VGS=30V, VDS=0V | 4 | ||
| Reverse Gate-Source Leakage Current | IGSS | -100 | nA | VGS=-30V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 9.5 | 12.5 | Ω | VGS=10V, ID=0.6A | 4 | |
| Input Capacitance | CISS | 120 | 150 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Output Capacitance | COSS | 20 | 25 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Reverse Transfer Capacitance | CRSS | 3 | 4 | pF | VDS=25V, VGS=0V, f=1MHz | 4 | |
| Total Gate Charge | QG | 5 | 6 | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 | |
| Turn-On Delay Time | tD(ON) | 5 | 20 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 | |
| Turn-On Rise Time | tR | 25 | 60 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 | |
| Turn-Off Delay Time | tD(OFF) | 7 | 25 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 | |
| Turn-Off Fall Time | tF | 25 | 60 | ns | VDD=325V, ID=1.2A, RG=50Ω (Note 2,3) | 4 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 1.2 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 4.8 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=1.2A | 4 | ||
| Total Gate Charge (Gate-Source) | QGS | 1 | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 | ||
| Gate-Drain Charge | QGD | 2.6 | nC | VDS=520V, VGS=10V, ID=1.2A (Note 2,3) | 4 | ||
| Reverse Recovery Time | trr | 160 | ns | VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1) | 4 | ||
| Reverse Recovery Charge | Qrr | 0.3 | μC | VGS=0V, IS=1.2A, dIF/dt=100A/μs (Note 1) | 4 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.4 | V/°C | ID=250μA | 4 | ||
| Junction to Ambient (SOT-223) | θJA | 150 | °C/W | SOT-223 package | 3 | ||
| Junction to Case (SOT-223) | θJC | 14 | °C/W | SOT-223 package | 3 |
CAD (KiCad official)
- Symbol:
1N65G-AA3-R - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
1n65g-aa3-r-etched.step/1n65g-aa3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);1n65g-aa3-r.step/1n65g-aa3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (7 pp, sha256
23d8dbd53ef62e8a, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).