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Contents

README

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KGF50N60KDA

KEC Semicon · IGBT Transistors / Modules · TO-247-3

KGF50N60KDA from KEC Semicon, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated gate control terminal. Gate-emitter voltage rating VGES = +/-20V; typical gate threshold VGE(th) = 5.5V (4.5V min, 7V max at IC=5mA). Drive with VGE=15V for full enhancement; total gate charge Qg ~200nC.
2 C passive Collector. IGBT high-side power terminal and cathode of the co-packaged anti-parallel fast recovery diode. Collector-emitter breakdown VCES = 600V; continuous IC = 100A @ Tc=25C (50A @ Tc=100C); pulsed ICM = 150A. Electrically connected to the metal tab of the TO-247 package.
3 E passive Emitter. IGBT low-side power terminal and anode of the co-packaged anti-parallel fast recovery diode. Diode continuous forward current IF = 50A @ Tc=100C, IFM = 100A, typical VF = 1.8V @ IF=50A.
TAB C passive Metal mounting tab, electrically connected to the Collector. Provides thermal path to heatsink; junction-to-case thermal resistance Rth(JC) = 0.45 C/W (IGBT), 1.0 C/W (diode). Must be electrically isolated from heatsink if grounded chassis is used.

Key specifications

Parameter Value
Manufacturer KEC Semicon
Package TO-247-3
Category Transistors/Thyristors
Pins 4

CAD (KiCad official)

  • Symbol: KGF50N60KDA
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: KEC Semicon datasheet (8 pp, sha256 d3a5395d9ddae9ea, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF